Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors

K. Sarpatwari; O. O. Awadelkarim; L. J. Passmore; T. T. Ho; M. W. Kuo; N. S. Dellas; T. S. Mayer; S. E. Mohney

doi:10.1109/TNANO.2010.2087392

Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors

K. Sarpatwari, O. O. Awadelkarim, L. J. Passmore, T. T. Ho, M. W. Kuo, N. S. Dellas, T. S. Mayer, S. E. Mohney

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Ω gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.

Original language	English (US)
Article number	5604321
Pages (from-to)	871-874
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	10
Issue number	4
DOIs	https://doi.org/10.1109/TNANO.2010.2087392
State	Published - Jul 2011

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2010.2087392

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@article{9181fa160dde4f4297dc789258063c05,

title = "Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors",

abstract = "We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Ω gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.",

author = "K. Sarpatwari and Awadelkarim, {O. O.} and Passmore, {L. J.} and Ho, {T. T.} and Kuo, {M. W.} and Dellas, {N. S.} and Mayer, {T. S.} and Mohney, {S. E.}",

note = "Funding Information: Manuscript received November 2, 2009; revised June 3, 2010; accepted August 15, 2010. Date of publication October 14, 2010; date of current version July 8, 2011. This work was supported in part by the National Science Foundation through ECS-0609282 and in part by the Materials Research Science and Engineering Center, Penn State through DMR-0820404. The review of this paper was arranged by Associate Editor B. Yu.",

year = "2011",

month = jul,

doi = "10.1109/TNANO.2010.2087392",

language = "English (US)",

volume = "10",

pages = "871--874",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

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TY - JOUR

T1 - Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors

AU - Sarpatwari, K.

AU - Awadelkarim, O. O.

AU - Passmore, L. J.

AU - Ho, T. T.

AU - Kuo, M. W.

AU - Dellas, N. S.

AU - Mayer, T. S.

AU - Mohney, S. E.

N1 - Funding Information: Manuscript received November 2, 2009; revised June 3, 2010; accepted August 15, 2010. Date of publication October 14, 2010; date of current version July 8, 2011. This work was supported in part by the National Science Foundation through ECS-0609282 and in part by the Materials Research Science and Engineering Center, Penn State through DMR-0820404. The review of this paper was arranged by Associate Editor B. Yu.

PY - 2011/7

Y1 - 2011/7

N2 - We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Ω gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.

AB - We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Ω gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.

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U2 - 10.1109/TNANO.2010.2087392

DO - 10.1109/TNANO.2010.2087392

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EP - 874

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 4

M1 - 5604321

ER -

Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors

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