Low-k dielectric obtained by noble gas implantation in silicon oxide

H. Assaf, E. Ntsoenzok, M. O. Ruault, S. Ashok

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5×10 16Xe/cm2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≥400°C results in the disappearance of bubbles from SiO2 layer for the dose of 1×10 16Xe/cm2. But for the higher doses of 3.5 and 5×1016Xe/cm2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO 2 sample from 4 (reference sample) to 1.5.

Original languageEnglish (US)
Pages (from-to)439-444
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 21 2006

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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