Low-k dielectric obtained by noble gas implantation in silicon oxide

H. Assaf; E. Ntsoenzok; M. O. Ruault; S. Ashok

doi:10.1557/proc-0914-f03-04

Low-k dielectric obtained by noble gas implantation in silicon oxide

H. Assaf, E. Ntsoenzok, M. O. Ruault, S. Ashok

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5×10 ¹⁶Xe/cm². As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≥400°C results in the disappearance of bubbles from SiO₂ layer for the dose of 1×10 ¹⁶Xe/cm². But for the higher doses of 3.5 and 5×10¹⁶Xe/cm², the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO ₂ sample from 4 (reference sample) to 1.5.

Original language	English (US)
Pages (from-to)	439-444
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	914
DOIs	https://doi.org/10.1557/proc-0914-f03-04
State	Published - 2006
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 18 2006 → Apr 21 2006

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Low-k dielectric obtained by noble gas implantation in silicon oxide",

abstract = "Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5×10 16Xe/cm2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≥400°C results in the disappearance of bubbles from SiO2 layer for the dose of 1×10 16Xe/cm2. But for the higher doses of 3.5 and 5×1016Xe/cm2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO 2 sample from 4 (reference sample) to 1.5.",

author = "H. Assaf and E. Ntsoenzok and Ruault, {M. O.} and S. Ashok",

year = "2006",

doi = "10.1557/proc-0914-f03-04",

language = "English (US)",

volume = "914",

pages = "439--444",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 21-04-2006",

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TY - JOUR

T1 - Low-k dielectric obtained by noble gas implantation in silicon oxide

AU - Assaf, H.

AU - Ntsoenzok, E.

AU - Ruault, M. O.

AU - Ashok, S.

PY - 2006

Y1 - 2006

N2 - Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5×10 16Xe/cm2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≥400°C results in the disappearance of bubbles from SiO2 layer for the dose of 1×10 16Xe/cm2. But for the higher doses of 3.5 and 5×1016Xe/cm2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO 2 sample from 4 (reference sample) to 1.5.

AB - Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5×10 16Xe/cm2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≥400°C results in the disappearance of bubbles from SiO2 layer for the dose of 1×10 16Xe/cm2. But for the higher doses of 3.5 and 5×1016Xe/cm2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO 2 sample from 4 (reference sample) to 1.5.

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U2 - 10.1557/proc-0914-f03-04

DO - 10.1557/proc-0914-f03-04

M3 - Conference article

AN - SCOPUS:33749609356

SN - 0272-9172

VL - 914

SP - 439

EP - 444

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - 2006 MRS Spring Meeting

Y2 - 18 April 2006 through 21 April 2006

ER -

Low-k dielectric obtained by noble gas implantation in silicon oxide

Abstract

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