TY - JOUR
T1 - Low-noise parametric resonant amplifier
AU - Lee, Wooram
AU - Afshari, Ehsan
N1 - Funding Information:
Manuscript received March 03, 2010; revised May 31, 2010; accepted July 16, 2010. Date of publication November 11, 2010; date of current version February 24, 2011. This work was supported by the C2S2 Focus Center, which is one of the six research centers funded under the Focus Center Research Program, which is a Semiconductor Research Corporation entity. The work of W. Lee was supported by a Samsung fellowship. This paper was recommended by Associate Editor A. Neviani.
PY - 2011
Y1 - 2011
N2 - We propose a resonant parametric amplifier with an enhanced noise performance by exploiting the noise-squeezing effect. Noise squeezing occurs through the phase-sensitive amplification process and suppresses one of the two quadrature components of the input noise. When the input signal is only in the direction of the nonsuppressed quadrature component, squeezing can lower that noise figure by almost 3 dB. The resonant structure of the proposed amplifier is inspired by a FabryPerot laser amplifier to achieve the squeezing effect using a low number of $LC$ elements. We design and simulate the proposed noise-squeezing parametric amplifier in a conventional 65-nm CMOS process. A minimum noise-squeezing factor of $-$0.35 dB is achieved with a signal gain of 26 dB for one quadrature component of a 10-GHz narrow-band signal.
AB - We propose a resonant parametric amplifier with an enhanced noise performance by exploiting the noise-squeezing effect. Noise squeezing occurs through the phase-sensitive amplification process and suppresses one of the two quadrature components of the input noise. When the input signal is only in the direction of the nonsuppressed quadrature component, squeezing can lower that noise figure by almost 3 dB. The resonant structure of the proposed amplifier is inspired by a FabryPerot laser amplifier to achieve the squeezing effect using a low number of $LC$ elements. We design and simulate the proposed noise-squeezing parametric amplifier in a conventional 65-nm CMOS process. A minimum noise-squeezing factor of $-$0.35 dB is achieved with a signal gain of 26 dB for one quadrature component of a 10-GHz narrow-band signal.
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U2 - 10.1109/TCSI.2010.2072370
DO - 10.1109/TCSI.2010.2072370
M3 - Article
AN - SCOPUS:79952004188
SN - 1549-8328
VL - 58
SP - 479
EP - 492
JO - IEEE Transactions on Circuits and Systems I: Regular Papers
JF - IEEE Transactions on Circuits and Systems I: Regular Papers
IS - 3
M1 - 5629457
ER -