TY - JOUR
T1 - Low-power and ultra-thin MoS2 photodetectors on glass
AU - Nasr, Joseph R.
AU - Simonson, Nicholas
AU - Oberoi, Aaryan
AU - Horn, Mark W.
AU - Robinson, Joshua A.
AU - Das, Saptarshi
N1 - Funding Information:
The work of J.R.N, and S.D was partially supported through Grant No. FA9550-17-1-0018 from Air Force Office of Scientific Research (AFOSR) through the Young Investigator Program. The authors would also like to acknowledge Corning Incorporation for sponsoring a part of this research. The authors also acknowledge the National Science Foundation through the I/UCRC Center for Atomically Thin Multifunctional Coatings (ATOMIC), Grant No. IIP-1540018. The authors would like to acknowledge Ke Wang for performing the HAADF-STEM characterization and Maxwell Wetherington from Penn State Materials Characterization Laboratory for performing the UV/Vis spectrophotometry measurements.
Publisher Copyright:
© 2020 American Chemical Society.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/11/24
Y1 - 2020/11/24
N2 - Integration of low-power consumer electronics on glass can revolutionize the automotive and transport sectors, packaging industry, smart building and interior design, healthcare, life science engineering, display technologies, and many other applications. However, direct growth of high-performance, scalable, and reliable electronic materials on glass is difficult owing to low thermal budget. Similarly, development of energy-efficient electronic and optoelectronic devices on glass requires manufacturing innovations. Here, we accomplish both by relatively low-temperature (<600 °C) metal-organic chemical vapor deposition growth of atomically thin MoS2 on multicomponent glass and fabrication of low-power phototransistors using atomic layer deposition (ALD)-grown, high-k, and ultra-thin (∼20 nm) Al2O3 as the top-gate dielectric, circumventing the challenges associated with the ALD nucleation of oxides on inert basal planes of van der Waals materials. The MoS2 photodetectors demonstrate the ability to detect low-intensity visible light at high speed and low energy expenditure of ∼100 pico Joules. Furthermore, low device-to-device performance variation across the entire 1 cm2 substrate and aggressive channel length scalability confirm the technology readiness level of ultra-thin MoS2 photodetectors on glass.
AB - Integration of low-power consumer electronics on glass can revolutionize the automotive and transport sectors, packaging industry, smart building and interior design, healthcare, life science engineering, display technologies, and many other applications. However, direct growth of high-performance, scalable, and reliable electronic materials on glass is difficult owing to low thermal budget. Similarly, development of energy-efficient electronic and optoelectronic devices on glass requires manufacturing innovations. Here, we accomplish both by relatively low-temperature (<600 °C) metal-organic chemical vapor deposition growth of atomically thin MoS2 on multicomponent glass and fabrication of low-power phototransistors using atomic layer deposition (ALD)-grown, high-k, and ultra-thin (∼20 nm) Al2O3 as the top-gate dielectric, circumventing the challenges associated with the ALD nucleation of oxides on inert basal planes of van der Waals materials. The MoS2 photodetectors demonstrate the ability to detect low-intensity visible light at high speed and low energy expenditure of ∼100 pico Joules. Furthermore, low device-to-device performance variation across the entire 1 cm2 substrate and aggressive channel length scalability confirm the technology readiness level of ultra-thin MoS2 photodetectors on glass.
UR - http://www.scopus.com/inward/record.url?scp=85096230203&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85096230203&partnerID=8YFLogxK
U2 - 10.1021/acsnano.0c06064
DO - 10.1021/acsnano.0c06064
M3 - Article
C2 - 33112615
AN - SCOPUS:85096230203
SN - 1936-0851
VL - 14
SP - 15440
EP - 15449
JO - ACS nano
JF - ACS nano
IS - 11
ER -