Low-power, high-speed Sb-based HEMTs and HBTs

R. Magno; J. B. Boos; P. M. Campbell; B. R. Bennett; E. R. Glaser; B. P. Tinkham; M. G. Ancona; K. D. Hobart; N. A. Papanicolaou; K. Ikossi; W. Kruppa; D. Park; B. V. Shanabrook; J. Mittereder; W. Chang; R. Bass; S. E. Mohney; S. Wang; J. Robinson; R. Tsai; M. Barsky; M. D. Lange; A. Gutierrez

Low-power, high-speed Sb-based HEMTs and HBTs

R. Magno, J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, B. P. Tinkham, M. G. Ancona, K. D. Hobart, N. A. Papanicolaou, K. Ikossi, W. Kruppa, D. Park, B. V. Shanabrook, J. Mittereder, W. Chang, R. Bass, S. E. Mohney, S. Wang, J. Robinson, R. TsaiM. Barsky, M. D. Lange, A. Gutierrez

Research output: Contribution to conference › Paper › peer-review

Abstract

Several recent advances have been made in the development of a high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) in the InAs, AlSb, and GaSb material system. Research has led to the development of the technology to manufacture AlSb/InAs HEMTS on a large scale. Along with this work, improvements have been made in the device operation. The power dissipation of the AlSb/InAs HEMTs has been found to be as little as one fifth that of an InAlAs/InGaAs HEMT operating at equivalent frequencies. An HBT with a p-type InGaSb base with a 0.5 eV bandgap has recently been made. The collector and emitter are made of n-type InAlAsSb alloys. The small bandgap of the base is an important ingredient in developing an HBT that operates at low bias, and therefore low power dissipation.

Original language	English (US)
Pages	191-204
Number of pages	14
State	Published - 2004
Event	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 9 2004 → May 14 2004

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Other	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	5/9/04 → 5/14/04

All Science Journal Classification (ASJC) codes

Engineering(all)

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Magno, R., Boos, J. B., Campbell, P. M., Bennett, B. R., Glaser, E. R., Tinkham, B. P., Ancona, M. G., Hobart, K. D., Papanicolaou, N. A., Ikossi, K., Kruppa, W., Park, D., Shanabrook, B. V., Mittereder, J., Chang, W., Bass, R., Mohney, S. E., Wang, S., Robinson, J., ... Gutierrez, A. (2004). Low-power, high-speed Sb-based HEMTs and HBTs. 191-204. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

@conference{88283576df1a44ac805b8551ed0a810c,

title = "Low-power, high-speed Sb-based HEMTs and HBTs",

abstract = "Several recent advances have been made in the development of a high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) in the InAs, AlSb, and GaSb material system. Research has led to the development of the technology to manufacture AlSb/InAs HEMTS on a large scale. Along with this work, improvements have been made in the device operation. The power dissipation of the AlSb/InAs HEMTs has been found to be as little as one fifth that of an InAlAs/InGaAs HEMT operating at equivalent frequencies. An HBT with a p-type InGaSb base with a 0.5 eV bandgap has recently been made. The collector and emitter are made of n-type InAlAsSb alloys. The small bandgap of the base is an important ingredient in developing an HBT that operates at low bias, and therefore low power dissipation.",

author = "R. Magno and Boos, {J. B.} and Campbell, {P. M.} and Bennett, {B. R.} and Glaser, {E. R.} and Tinkham, {B. P.} and Ancona, {M. G.} and Hobart, {K. D.} and Papanicolaou, {N. A.} and K. Ikossi and W. Kruppa and D. Park and Shanabrook, {B. V.} and J. Mittereder and W. Chang and R. Bass and Mohney, {S. E.} and S. Wang and J. Robinson and R. Tsai and M. Barsky and Lange, {M. D.} and A. Gutierrez",

year = "2004",

language = "English (US)",

pages = "191--204",

note = "State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium ; Conference date: 09-05-2004 Through 14-05-2004",

}

Magno, R, Boos, JB, Campbell, PM, Bennett, BR, Glaser, ER, Tinkham, BP, Ancona, MG, Hobart, KD, Papanicolaou, NA, Ikossi, K, Kruppa, W, Park, D, Shanabrook, BV, Mittereder, J, Chang, W, Bass, R, Mohney, SE, Wang, S, Robinson, J, Tsai, R, Barsky, M, Lange, MD & Gutierrez, A 2004, 'Low-power, high-speed Sb-based HEMTs and HBTs', Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States, 5/9/04 - 5/14/04 pp. 191-204.

Low-power, high-speed Sb-based HEMTs and HBTs. / Magno, R.; Boos, J. B.; Campbell, P. M. et al.
2004. 191-204 Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Low-power, high-speed Sb-based HEMTs and HBTs

AU - Magno, R.

AU - Boos, J. B.

AU - Campbell, P. M.

AU - Bennett, B. R.

AU - Glaser, E. R.

AU - Tinkham, B. P.

AU - Ancona, M. G.

AU - Hobart, K. D.

AU - Papanicolaou, N. A.

AU - Ikossi, K.

AU - Kruppa, W.

AU - Park, D.

AU - Shanabrook, B. V.

AU - Mittereder, J.

AU - Chang, W.

AU - Bass, R.

AU - Mohney, S. E.

AU - Wang, S.

AU - Robinson, J.

AU - Tsai, R.

AU - Barsky, M.

AU - Lange, M. D.

AU - Gutierrez, A.

PY - 2004

Y1 - 2004

N2 - Several recent advances have been made in the development of a high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) in the InAs, AlSb, and GaSb material system. Research has led to the development of the technology to manufacture AlSb/InAs HEMTS on a large scale. Along with this work, improvements have been made in the device operation. The power dissipation of the AlSb/InAs HEMTs has been found to be as little as one fifth that of an InAlAs/InGaAs HEMT operating at equivalent frequencies. An HBT with a p-type InGaSb base with a 0.5 eV bandgap has recently been made. The collector and emitter are made of n-type InAlAsSb alloys. The small bandgap of the base is an important ingredient in developing an HBT that operates at low bias, and therefore low power dissipation.

AB - Several recent advances have been made in the development of a high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) in the InAs, AlSb, and GaSb material system. Research has led to the development of the technology to manufacture AlSb/InAs HEMTS on a large scale. Along with this work, improvements have been made in the device operation. The power dissipation of the AlSb/InAs HEMTs has been found to be as little as one fifth that of an InAlAs/InGaAs HEMT operating at equivalent frequencies. An HBT with a p-type InGaSb base with a 0.5 eV bandgap has recently been made. The collector and emitter are made of n-type InAlAsSb alloys. The small bandgap of the base is an important ingredient in developing an HBT that operates at low bias, and therefore low power dissipation.

UR - http://www.scopus.com/inward/record.url?scp=5744253133&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5744253133&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:5744253133

SP - 191

EP - 204

T2 - State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium

Y2 - 9 May 2004 through 14 May 2004

ER -

Low-power, high-speed Sb-based HEMTs and HBTs

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