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Low power Loadless 4T SRAM cell based on degenerately doped source (DDS) In0.53Ga0.47As Tunnel FETs
V. Saripalli, D. K. Mohata, S. Mookerjea, S. Datta, Vijaykrishnan Narayanan
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
9
Scopus
citations