Low power Loadless 4T SRAM cell based on degenerately doped source (DDS) In0.53Ga0.47As Tunnel FETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Fingerprint

Dive into the research topics of 'Low power Loadless 4T SRAM cell based on degenerately doped source (DDS) In0.53Ga0.47As Tunnel FETs'. Together they form a unique fingerprint.

Keyphrases

Material Science

Engineering