TY - JOUR
T1 - Low-temperature atomic-layer-deposited high-Κ dielectric for p-channel In0.7Ga0.3As/GaAs0.35Sb 0.65 heterojunction tunneling field-effect transistor
AU - Rajamohanan, Bijesh
AU - Mohata, Dheeraj
AU - Zhernokletov, Dmitry
AU - Brennan, Barry
AU - Wallace, Robert M.
AU - Engel-Herbert, Roman
AU - Datta, Suman
N1 - Funding Information:
This study was supported by RFBR grants 14-04-00219_a, 15-04-05602_a, 14-04-31447-mol_a, MES RF grant МК-1207.2014.4 and FASO VI.53.2.2. All microscopy imaging was done at the ICG SB RAS Microscopy Core.
PY - 2013/10
Y1 - 2013/10
N2 - The interface quality of a low temperature atomic-layer-deposited (ALD) HfO2/Al2O3 bilayer high-Κ gate dielectric on a GaAs0.35Sb0.65 channel for heterojunction p-channel tunneling FETs is investigated. Lowering the ALD temperature from 250 to 110 °C results in improved capacitance- voltage characteristics and lower interface trap density in metal-oxide-semiconductor capacitor structures. Using the low-temperature ALD high-Κ dielectric, a GaAs0.35Sb0.65/In 0.7Ga0.3As heterojunction p-channel tunneling FET is demonstrated with an improved switching slope and higher on-off current ratio. X-ray photoelectron spectroscopy is performed to investigate the effect of the deposition temperature on the chemical composition of the high-Κ/GaAs 0.35Sb0.65 interface.
AB - The interface quality of a low temperature atomic-layer-deposited (ALD) HfO2/Al2O3 bilayer high-Κ gate dielectric on a GaAs0.35Sb0.65 channel for heterojunction p-channel tunneling FETs is investigated. Lowering the ALD temperature from 250 to 110 °C results in improved capacitance- voltage characteristics and lower interface trap density in metal-oxide-semiconductor capacitor structures. Using the low-temperature ALD high-Κ dielectric, a GaAs0.35Sb0.65/In 0.7Ga0.3As heterojunction p-channel tunneling FET is demonstrated with an improved switching slope and higher on-off current ratio. X-ray photoelectron spectroscopy is performed to investigate the effect of the deposition temperature on the chemical composition of the high-Κ/GaAs 0.35Sb0.65 interface.
UR - https://www.scopus.com/pages/publications/84887785571
UR - https://www.scopus.com/pages/publications/84887785571#tab=citedBy
U2 - 10.7567/APEX.6.101201
DO - 10.7567/APEX.6.101201
M3 - Article
AN - SCOPUS:84887785571
SN - 1882-0778
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
IS - 10
M1 - 101201
ER -