Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

Jian Gong Cheng; Junling Wang; Tanawadee Dechakupt; Susan Trolier-McKinstry

doi:10.1063/1.2140071

Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

Jian Gong Cheng, Junling Wang, Tanawadee Dechakupt, Susan Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

The crystallization temperature of Bi1.5 Zn0.5 Nb1.5 O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures ≤400 °C makes integration with polymeric substrates possible.

Original language	English (US)
Article number	232905
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	23
DOIs	https://doi.org/10.1063/1.2140071
State	Published - 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2140071

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@article{3b0b2d847a6c4ec98266c73b7e08d923,

title = "Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing",

abstract = "The crystallization temperature of Bi1.5 Zn0.5 Nb1.5 O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures ≤400 °C makes integration with polymeric substrates possible.",

author = "Cheng, {Jian Gong} and Junling Wang and Tanawadee Dechakupt and Susan Trolier-McKinstry",

note = "Funding Information: The authors gratefully acknowledge the financial support of NASA via a subcontract through QorTek, Inc. ",

year = "2005",

doi = "10.1063/1.2140071",

language = "English (US)",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

AU - Cheng, Jian Gong

AU - Wang, Junling

AU - Dechakupt, Tanawadee

AU - Trolier-McKinstry, Susan

N1 - Funding Information: The authors gratefully acknowledge the financial support of NASA via a subcontract through QorTek, Inc.

PY - 2005

Y1 - 2005

N2 - The crystallization temperature of Bi1.5 Zn0.5 Nb1.5 O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures ≤400 °C makes integration with polymeric substrates possible.

AB - The crystallization temperature of Bi1.5 Zn0.5 Nb1.5 O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures ≤400 °C makes integration with polymeric substrates possible.

UR - http://www.scopus.com/inward/record.url?scp=28444467364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28444467364&partnerID=8YFLogxK

U2 - 10.1063/1.2140071

DO - 10.1063/1.2140071

M3 - Article

AN - SCOPUS:28444467364

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232905

ER -

Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

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