Low-temperature dielectric relaxation in the pyrochlore (Bi 3/4Zn1/4)2(Zn1/4Ta 3/4)2O7 compound

Chen Ang; Zhi Yu; H. J. Youn; C. A. Randall; A. S. Bhalla; L. E. Cross; J. Nino; M. Lanagan

doi:10.1063/1.1486045

Low-temperature dielectric relaxation in the pyrochlore (Bi _3/4Zn_1/4)₂(Zn_1/4Ta _3/4)₂O₇ compound

Chen Ang, Zhi Yu, H. J. Youn, C. A. Randall, A. S. Bhalla, L. E. Cross, J. Nino, M. Lanagan

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Abstract

The dielectric behavior of the pyrochlore (Bi_3/4Zn _1/4)₂(Zn_1/4Ta_3/4)₂O ₇ compound has been studied. A low-temperature dielectric relaxation was observed in a low-permittivity matrix with ε=∼60. The dielectric relaxation process follows a modified Debye model in the vicinity of the relaxation peak, and the relaxation rate follows the Arrhenius law in the wide frequency range 10² to ∼10¹⁰Hz. The temperature intensity of dielectric peaks are independent of dc bias (≤60 kV/cm). The dielectric relaxation is tentatively attributed to the hopping of Zn/Bi ions at A sites with more than one equivalent potential minima, and the reorientation of the dipoles probably formed through interactions with the "seventh oxygen" and the Bi/Zn A-site ions in the pyrochlore (Bi _3/4Zn_1/4)₂(Zn_1/4Ta _3/4)₂O₇ compound.

Original language	English (US)
Pages (from-to)	4807-4809
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	25
DOIs	https://doi.org/10.1063/1.1486045
State	Published - Jun 24 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Low-temperature dielectric relaxation in the pyrochlore (Bi 3/4Zn1/4)2(Zn1/4Ta 3/4)2O7 compound",

abstract = "The dielectric behavior of the pyrochlore (Bi3/4Zn 1/4)2(Zn1/4Ta3/4)2O 7 compound has been studied. A low-temperature dielectric relaxation was observed in a low-permittivity matrix with ε=∼60. The dielectric relaxation process follows a modified Debye model in the vicinity of the relaxation peak, and the relaxation rate follows the Arrhenius law in the wide frequency range 102 to ∼1010Hz. The temperature intensity of dielectric peaks are independent of dc bias (≤60 kV/cm). The dielectric relaxation is tentatively attributed to the hopping of Zn/Bi ions at A sites with more than one equivalent potential minima, and the reorientation of the dipoles probably formed through interactions with the {"}seventh oxygen{"} and the Bi/Zn A-site ions in the pyrochlore (Bi 3/4Zn1/4)2(Zn1/4Ta 3/4)2O7 compound.",

author = "Chen Ang and Zhi Yu and Youn, {H. J.} and Randall, {C. A.} and Bhalla, {A. S.} and Cross, {L. E.} and J. Nino and M. Lanagan",

year = "2002",

month = jun,

day = "24",

doi = "10.1063/1.1486045",

language = "English (US)",

volume = "80",

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publisher = "American Institute of Physics Publising LLC",

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AU - Ang, Chen

AU - Yu, Zhi

AU - Youn, H. J.

AU - Randall, C. A.

AU - Bhalla, A. S.

AU - Cross, L. E.

AU - Nino, J.

AU - Lanagan, M.

PY - 2002/6/24

Y1 - 2002/6/24

N2 - The dielectric behavior of the pyrochlore (Bi3/4Zn 1/4)2(Zn1/4Ta3/4)2O 7 compound has been studied. A low-temperature dielectric relaxation was observed in a low-permittivity matrix with ε=∼60. The dielectric relaxation process follows a modified Debye model in the vicinity of the relaxation peak, and the relaxation rate follows the Arrhenius law in the wide frequency range 102 to ∼1010Hz. The temperature intensity of dielectric peaks are independent of dc bias (≤60 kV/cm). The dielectric relaxation is tentatively attributed to the hopping of Zn/Bi ions at A sites with more than one equivalent potential minima, and the reorientation of the dipoles probably formed through interactions with the "seventh oxygen" and the Bi/Zn A-site ions in the pyrochlore (Bi 3/4Zn1/4)2(Zn1/4Ta 3/4)2O7 compound.

AB - The dielectric behavior of the pyrochlore (Bi3/4Zn 1/4)2(Zn1/4Ta3/4)2O 7 compound has been studied. A low-temperature dielectric relaxation was observed in a low-permittivity matrix with ε=∼60. The dielectric relaxation process follows a modified Debye model in the vicinity of the relaxation peak, and the relaxation rate follows the Arrhenius law in the wide frequency range 102 to ∼1010Hz. The temperature intensity of dielectric peaks are independent of dc bias (≤60 kV/cm). The dielectric relaxation is tentatively attributed to the hopping of Zn/Bi ions at A sites with more than one equivalent potential minima, and the reorientation of the dipoles probably formed through interactions with the "seventh oxygen" and the Bi/Zn A-site ions in the pyrochlore (Bi 3/4Zn1/4)2(Zn1/4Ta 3/4)2O7 compound.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Low-temperature dielectric relaxation in the pyrochlore (Bi _3/4Zn_1/4)₂(Zn_1/4Ta _3/4)₂O₇ compound

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