Low-temperature growth of large-area heteroatom-doped graphene film

Jia Zhang, Junjie Li, Zhenlong Wang, Xiaona Wang, Wei Feng, Wei Zheng, Wenwu Cao, Pingan Hu

Research output: Contribution to journalArticlepeer-review

84 Scopus citations


Large-area heteroatom-doped graphene films are greatly attractive materials for various applications, such as electronics, fuel cells, and supercapacitors. Currently, these graphene films are prepared by the high-temperature chemical vapor deposition method, which produces a low doping level in N-doped graphene (NG) and fails in the synthesis of large-area S-doped graphene (SG) film. Here, we report a low-temperature method toward the synthesis of large-area heavily heteroatom-doped graphene on copper foils via a free radical reaction using polyhalogenated aromatic compounds. This low-temperature method allows the synthesis of single-layer NG film with a high nitrogen content, and the production of large-area SG film for the first time. Both doped graphenes show enhanced electrical properties in field effect transistors as well as high-performance electrocatalysts for fuel cells.

Original languageEnglish (US)
Pages (from-to)2460-2466
Number of pages7
JournalChemistry of Materials
Issue number7
StatePublished - Apr 8 2014

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry


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