Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress

A. Behnam; F. Karbassian; S. Mohajerzadeh; A. Ebrahimi; M. D. Robertson

doi:10.1016/j.sse.2006.07.013

Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress

A. Behnam
, F. Karbassian
, S. Mohajerzadeh
, A. Ebrahimi
, M. D. Robertson

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopy where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4%. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm²/V s.

Original language	English (US)
Pages (from-to)	1618-1624
Number of pages	7
Journal	Solid-State Electronics
Volume	50
Issue number	9-10
DOIs	https://doi.org/10.1016/j.sse.2006.07.013
State	Published - Sep 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2006.07.013

Cite this

@article{70cf8e3606fe4dd58b32f2d42f910d5b,

title = "Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress",

abstract = "The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopy where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4\%. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm2/V s.",

author = "A. Behnam and F. Karbassian and S. Mohajerzadeh and A. Ebrahimi and Robertson, \{M. D.\}",

note = "Funding Information: This work has been supported with a grant from Center of High-Tech, Ministry of Industry and partial support from Research Council of the University of Tehran. In addition, support from the Natural Sciences and Engineering Research Council of Canada and the Canada Research Chairs program is cordially appreciated.",

year = "2006",

month = sep,

doi = "10.1016/j.sse.2006.07.013",

language = "English (US)",

volume = "50",

pages = "1618--1624",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "9-10",

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TY - JOUR

T1 - Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress

AU - Behnam, A.

AU - Karbassian, F.

AU - Mohajerzadeh, S.

AU - Ebrahimi, A.

AU - Robertson, M. D.

N1 - Funding Information: This work has been supported with a grant from Center of High-Tech, Ministry of Industry and partial support from Research Council of the University of Tehran. In addition, support from the Natural Sciences and Engineering Research Council of Canada and the Canada Research Chairs program is cordially appreciated.

PY - 2006/9

Y1 - 2006/9

N2 - The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopy where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4%. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm2/V s.

AB - The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopy where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4%. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm2/V s.

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U2 - 10.1016/j.sse.2006.07.013

DO - 10.1016/j.sse.2006.07.013

M3 - Article

AN - SCOPUS:33750324196

SN - 0038-1101

VL - 50

SP - 1618

EP - 1624

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9-10

ER -

Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress

Abstract

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