Low-temperature nitride transformation reactions

David Hook, Seymen Aygun, William Borland, Jon Paul Maria

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


This study illustrates a novel method of transforming between two refractory nitrides at temperatures well below their respective melting points. Silicon nitride (Si 3N 4) is an excellent thermal and electronic insulator, with applications in the microelectronic, automotive and technical ceramic industries. Thermodynamically, there is a significant decrease in the Gibb's Free Energy inherent in the transformation between Si 3N 4 and a number of refractory metal nitrides; however, these transformation reactions are limited in the pure state by a kinetic barrier at any temperature appreciably lower than the melting point of Si 3N 4 (∼2173 K). Results of this study illustrate the successful conversion of powdered amorphous Si 3N 4 to TiN. The transformation is made possible by a liquid phase present in a number of Ti-based alloys at temperatures in the vicinity of 800°C. Since both nitrides (SiN x and TiN) are refractory, the presence of the liquid phase provides a high-diffusivity pathway, thus overcoming the kinetic barrier associated with the otherwise thermodynamically favorable reaction.

Original languageEnglish (US)
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Number of pages3
StatePublished - Dec 1 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: Jun 19 2011Jun 24 2011

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/TerritoryUnited States
CitySeattle, WA

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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