Low-temperature processed beta-phase In2Se3ferroelectric semiconductor thin film transistors

Sora Lee, Xiaotian Zhang, Thomas McKnight, Bhavesh Ramkorun, Huaiyu Wang, Venkatraman Gopalan, Joan M. Redwing, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

As scaling becomes increasingly difficult, there is growing interest in vertical or three-dimensional stacking of transistors and especially memory. Ferroelectric semiconductor field effect transistors can be key enablers to improve energy efficiency and overall chip and memory performance. In this work, low-temperature processed, back-end-of-the-line compatible transistors were demonstrated by depositing a layered chalcogenide ferroelectric semiconductor, beta-phase In2Se3, at temperature as low as 400 °C. Top gate n-channel In2Se3 thin film transistors were fabricated with field-effect mobility ∼1 cm2 V-1 s-1, and simple polarization switching based memory results are presented.

Original languageEnglish (US)
Article number025023
Journal2D Materials
Volume9
Issue number2
DOIs
StatePublished - Apr 2022

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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