Abstract
The presence of electrically active defects in electron irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures {less-than or approximate}12 K with electrons of energies {less-than or approximate}1.50MeV. Seemingly, the concentration of single vacancies on the irradiated samples is low. This is deduced from the small recovery in the samples properties observed upon annealing at ∼75 K. Also two annealing stages observed at ∼140-150 K and ∼240 K are attributed to the self-interstitial. Electron traps observed at ∼(Ec - 0.14) eV and (E - 0.24) eV in the ga p are ascribed to the carbon interstitial and to the divacancy, respectively.
Original language | English (US) |
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Pages (from-to) | 341-350 |
Number of pages | 10 |
Journal | Physica B+C |
Volume | 144 |
Issue number | 3 |
DOIs | |
State | Published - 1987 |
All Science Journal Classification (ASJC) codes
- General Engineering