Low-temperature radiation damage in silicon. I. Annealing studies on n-type material

The presence of electrically active defects in electron irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures {less-than or approximate}12 K with electrons of energies {less-than or approximate}1.50MeV. Seemingly, the concentration of single vacancies on the irradiated samples is low. This is deduced from the small recovery in the samples properties observed upon annealing at ∼75 K. Also two annealing stages observed at ∼140-150 K and ∼240 K are attributed to the self-interstitial. Electron traps observed at ∼(E_c - 0.14) eV and (E - 0.24) eV in the ga p are ascribed to the carbon interstitial and to the divacancy, respectively.