Low-voltage double-gate ZnO thin-film transistor circuits

Yuanyuan V. Li; Jose Israel Ramirez; Kaige G. Sun; Thomas N. Jackson

doi:10.1109/LED.2013.2263193

Low-voltage double-gate ZnO thin-film transistor circuits

Yuanyuan V. Li, Jose Israel Ramirez, Kaige G. Sun, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain > 100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with V_DD = 1.5 V, I_D = 28 μA, and propagation delay of 2 μs per stage.

Original language	English (US)
Article number	6530657
Pages (from-to)	891-893
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	7
DOIs	https://doi.org/10.1109/LED.2013.2263193
State	Published - Jun 17 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2013.2263193

Cite this

@article{9596e98bded74d1f80fbfa1c9ab2c7ae,

title = "Low-voltage double-gate ZnO thin-film transistor circuits",

abstract = "In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain > 100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with VDD = 1.5 V, ID = 28 μA, and propagation delay of 2 μs per stage.",

author = "Li, {Yuanyuan V.} and Ramirez, {Jose Israel} and Sun, {Kaige G.} and Jackson, {Thomas N.}",

year = "2013",

month = jun,

day = "17",

doi = "10.1109/LED.2013.2263193",

language = "English (US)",

volume = "34",

pages = "891--893",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Low-voltage double-gate ZnO thin-film transistor circuits

AU - Li, Yuanyuan V.

AU - Ramirez, Jose Israel

AU - Sun, Kaige G.

AU - Jackson, Thomas N.

PY - 2013/6/17

Y1 - 2013/6/17

N2 - In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain > 100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with VDD = 1.5 V, ID = 28 μA, and propagation delay of 2 μs per stage.

AB - In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain > 100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with VDD = 1.5 V, ID = 28 μA, and propagation delay of 2 μs per stage.

UR - http://www.scopus.com/inward/record.url?scp=84880049000&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880049000&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2263193

DO - 10.1109/LED.2013.2263193

M3 - Article

AN - SCOPUS:84880049000

SN - 0741-3106

VL - 34

SP - 891

EP - 893

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 6530657

ER -

Low-voltage double-gate ZnO thin-film transistor circuits

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this