Low voltage tunable barium strontium titanate thin film capacitors for RF and microwave applications

Ali Tombak; Francisco Tito Ayguavives; Jon Paul Maria; Gregory T. Stauf; Angus I. Kingon; Amir Mortazawi

doi:10.1109/MWSYM.2000.861790

Low voltage tunable barium strontium titanate thin film capacitors for RF and microwave applications

Ali Tombak, Francisco Tito Ayguavives, Jon Paul Maria, Gregory T. Stauf, Angus I. Kingon, Amir Mortazawi

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

In this paper, we report on the fabrication and testing of thin film barium strontium titanate (BST) based capacitors for RF and microwave components. At 7 V DC applied, MOCVD BST parallel plate capacitors yielded 60% (2.4:1) tunability between 45 MHz and 200 MHz. In this frequency range, the dielectric loss tangent was typically 0.004. Measured results for the frequency dependent dielectric permittivity and tunability at large RF voltage amplitudes are presented.

Original language	English (US)
Pages (from-to)	1345-1348
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
DOIs	https://doi.org/10.1109/MWSYM.2000.861790
State	Published - 2000

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/MWSYM.2000.861790

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title = "Low voltage tunable barium strontium titanate thin film capacitors for RF and microwave applications",

abstract = "In this paper, we report on the fabrication and testing of thin film barium strontium titanate (BST) based capacitors for RF and microwave components. At 7 V DC applied, MOCVD BST parallel plate capacitors yielded 60% (2.4:1) tunability between 45 MHz and 200 MHz. In this frequency range, the dielectric loss tangent was typically 0.004. Measured results for the frequency dependent dielectric permittivity and tunability at large RF voltage amplitudes are presented.",

author = "Ali Tombak and Ayguavives, {Francisco Tito} and Maria, {Jon Paul} and Stauf, {Gregory T.} and Kingon, {Angus I.} and Amir Mortazawi",

year = "2000",

doi = "10.1109/MWSYM.2000.861790",

language = "English (US)",

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AU - Tombak, Ali

AU - Ayguavives, Francisco Tito

AU - Maria, Jon Paul

AU - Stauf, Gregory T.

AU - Kingon, Angus I.

AU - Mortazawi, Amir

PY - 2000

Y1 - 2000

N2 - In this paper, we report on the fabrication and testing of thin film barium strontium titanate (BST) based capacitors for RF and microwave components. At 7 V DC applied, MOCVD BST parallel plate capacitors yielded 60% (2.4:1) tunability between 45 MHz and 200 MHz. In this frequency range, the dielectric loss tangent was typically 0.004. Measured results for the frequency dependent dielectric permittivity and tunability at large RF voltage amplitudes are presented.

AB - In this paper, we report on the fabrication and testing of thin film barium strontium titanate (BST) based capacitors for RF and microwave components. At 7 V DC applied, MOCVD BST parallel plate capacitors yielded 60% (2.4:1) tunability between 45 MHz and 200 MHz. In this frequency range, the dielectric loss tangent was typically 0.004. Measured results for the frequency dependent dielectric permittivity and tunability at large RF voltage amplitudes are presented.

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JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

ER -

Low voltage tunable barium strontium titanate thin film capacitors for RF and microwave applications

Abstract

All Science Journal Classification (ASJC) codes

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