Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics

Kwang Hwan Cho; Min Gyu Kang; Seung Min Oh; Chong Yun Kang; Youngpak Lee; Seok Jin Yoon

doi:10.1016/j.tsf.2010.03.061

Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics

Kwang Hwan Cho, Min Gyu Kang, Seung Min Oh, Chong Yun Kang, Youngpak Lee, Seok Jin Yoon

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report the fabrication of ZnO based thin-film transistors (TFTs) with high-k gate insulator of Ti-substituted Bi_1.5ZnNb_1.5O ₇ (BZN) films. (Bi_1.5Zn_0.5)(Zn _0.4Nb_1.43Ti_0.3O₇) film deposited on Pt/Ti/SiO₂/Si substrate by pulsed laser deposition at room temperature exhibits high dielectric constant of 73 at 100 kHz, while BZN film shows much lower dielectric constant of 50, respectively. The increasing dielectric constant with increasing Ti substitution can be attributed to the presence of a highly polarizable TiO₆ octahedra and its strong correlation with the NbO₆ octahedra. All room temperature processed ZnO based TFTs using Ti-substituted BZN gate insulator exhibited filed effect mobility of 0.75 cm²/Vs and low voltage device performance less than 2.5 V.

Original language	English (US)
Pages (from-to)	6277-6279
Number of pages	3
Journal	Thin Solid Films
Volume	518
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2010.03.061
State	Published - Sep 1 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.03.061

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title = "Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics",

abstract = "We report the fabrication of ZnO based thin-film transistors (TFTs) with high-k gate insulator of Ti-substituted Bi1.5ZnNb1.5O 7 (BZN) films. (Bi1.5Zn0.5)(Zn 0.4Nb1.43Ti0.3O7) film deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition at room temperature exhibits high dielectric constant of 73 at 100 kHz, while BZN film shows much lower dielectric constant of 50, respectively. The increasing dielectric constant with increasing Ti substitution can be attributed to the presence of a highly polarizable TiO6 octahedra and its strong correlation with the NbO6 octahedra. All room temperature processed ZnO based TFTs using Ti-substituted BZN gate insulator exhibited filed effect mobility of 0.75 cm2/Vs and low voltage device performance less than 2.5 V.",

author = "Cho, {Kwang Hwan} and Kang, {Min Gyu} and Oh, {Seung Min} and Kang, {Chong Yun} and Youngpak Lee and Yoon, {Seok Jin}",

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doi = "10.1016/j.tsf.2010.03.061",

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T1 - Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics

AU - Cho, Kwang Hwan

AU - Kang, Min Gyu

AU - Oh, Seung Min

AU - Kang, Chong Yun

AU - Lee, Youngpak

AU - Yoon, Seok Jin

PY - 2010/9/1

Y1 - 2010/9/1

N2 - We report the fabrication of ZnO based thin-film transistors (TFTs) with high-k gate insulator of Ti-substituted Bi1.5ZnNb1.5O 7 (BZN) films. (Bi1.5Zn0.5)(Zn 0.4Nb1.43Ti0.3O7) film deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition at room temperature exhibits high dielectric constant of 73 at 100 kHz, while BZN film shows much lower dielectric constant of 50, respectively. The increasing dielectric constant with increasing Ti substitution can be attributed to the presence of a highly polarizable TiO6 octahedra and its strong correlation with the NbO6 octahedra. All room temperature processed ZnO based TFTs using Ti-substituted BZN gate insulator exhibited filed effect mobility of 0.75 cm2/Vs and low voltage device performance less than 2.5 V.

AB - We report the fabrication of ZnO based thin-film transistors (TFTs) with high-k gate insulator of Ti-substituted Bi1.5ZnNb1.5O 7 (BZN) films. (Bi1.5Zn0.5)(Zn 0.4Nb1.43Ti0.3O7) film deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition at room temperature exhibits high dielectric constant of 73 at 100 kHz, while BZN film shows much lower dielectric constant of 50, respectively. The increasing dielectric constant with increasing Ti substitution can be attributed to the presence of a highly polarizable TiO6 octahedra and its strong correlation with the NbO6 octahedra. All room temperature processed ZnO based TFTs using Ti-substituted BZN gate insulator exhibited filed effect mobility of 0.75 cm2/Vs and low voltage device performance less than 2.5 V.

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JO - Thin Solid Films

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ER -

Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics

Abstract

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