@article{9ef0d60b774749c3baeb6d8a1f96b440,
title = "Lowering Area Overheads for FeFET-Based Energy-Efficient Nonvolatile Flip-Flops",
abstract = "This brief exploits the fusion of low-power logic and nonvolatile memory inside the emerging ferroelectric FETs (FeFETs) and proposes a new nonvolatile D flip-flop (nvDFF) through the device-circuit co-design. Compared with existing FeFET-based nvDFFs with on-demand control of backup and restore (BR), the area overhead is lowered by half, and the routing cost is reduced with embedded backup control into the supply voltage. Circuit simulations show below 5% energy-delay overhead in the normal mode and femtojoule BR energy. This new nvDFF promises area-and energy-efficient nonvolatile computing for power-gating and energy-harvesting applications.",
author = "Xueqing Li and Sumitha George and Yuhua Liang and Kaisheng Ma and Kai Ni and Ahmedullah Aziz and Gupta, {Sumeet Kumar} and John Sampson and Chang, {Meng Fan} and Yongpan Liu and Huazhong Yang and Suman Datta and Vijaykrishnan Narayanan",
note = "Funding Information: Manuscript received February 8, 2018; revised March 23, 2018 and April 11, 2018; accepted April 14, 2018. Date of publication May 1, 2018; date of current version May 21, 2018. This work was supported in part by NSFC under Grant 61720106013, Grant 61674094, and Grant 61604111, in part by the Beijing Innovation Center for Future Chip, in part by GRC under Grant 2657.001, in part by NSF ASSIST, and in part by ASCENT and CRISP, two of the six centers in JUMP, a Semiconductor Research Corporation Program Sponsored by DARPA. The review of this brief was arranged by Editor C. Monzio Compagnoni. (Corresponding authors: Huazhong Yang; Vijaykrishnan Narayanan.) X. Li, Y. Liu, and H. Yang are with the Electronic Engineering Department, Tsinghua University, Beijing 100084, China (e-mail: xueqingli@tsinghua.edu.cn; ypliu@tsinghua.edu.cn; yanghz@ tsinghua.edu.cn). Publisher Copyright: {\textcopyright} 2018 IEEE.",
year = "2018",
month = jun,
doi = "10.1109/TED.2018.2829348",
language = "English (US)",
volume = "65",
pages = "2670--2674",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}