TY - JOUR
T1 - Magnetic, electrical transport, and thermoelectric properties of Sr4 Ru3 O10
T2 - Evidence for a field-induced electronic phase transition at low temperatures
AU - Xu, Zhuan
AU - Xu, Xiangfan
AU - Freitas, Rafael S.
AU - Long, Zhenyi
AU - Zhou, Meng
AU - Fobes, David
AU - Fang, Minghu
AU - Schiffer, Peter
AU - Mao, Zhiqiang
AU - Liu, Ying
PY - 2007/9/10
Y1 - 2007/9/10
N2 - We report measurements on resistivity, thermopower, and magnetization as a function of temperature and magnetic field on single crystalline Sr4 Ru3 O10 grown by the floating-zone method. The in-plane and c -axis resistivities, magnetization, and the thermopower were found to exhibit a step feature at low temperatures (below roughly 30 K), accompanied by hysteresis behavior when the in-plane field was swept up and down from below 10 kOe to above 20 kOe. In particular, the sharp increase in the thermopower with increasing in-plane magnetic field at low temperatures has not been observed previously in layered transition metal oxides. We propose that these observations can be explained by the existence of a transition between two electronic states in Sr4 Ru3 O10 in low and high in-plane magnetic fields, respectively, and the alignment of domains is responsible for the emergence of a different electronic state as the in-plane field is ramped up.
AB - We report measurements on resistivity, thermopower, and magnetization as a function of temperature and magnetic field on single crystalline Sr4 Ru3 O10 grown by the floating-zone method. The in-plane and c -axis resistivities, magnetization, and the thermopower were found to exhibit a step feature at low temperatures (below roughly 30 K), accompanied by hysteresis behavior when the in-plane field was swept up and down from below 10 kOe to above 20 kOe. In particular, the sharp increase in the thermopower with increasing in-plane magnetic field at low temperatures has not been observed previously in layered transition metal oxides. We propose that these observations can be explained by the existence of a transition between two electronic states in Sr4 Ru3 O10 in low and high in-plane magnetic fields, respectively, and the alignment of domains is responsible for the emergence of a different electronic state as the in-plane field is ramped up.
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U2 - 10.1103/PhysRevB.76.094405
DO - 10.1103/PhysRevB.76.094405
M3 - Article
AN - SCOPUS:34548722647
SN - 1098-0121
VL - 76
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 9
M1 - 094405
ER -