@inproceedings{fb2e4a810c7b4c93a0be6c9422bdbf76,
title = "Magnetic field sensing with 4H SiC diodes: N vs P implantation",
abstract = "We explore the magnetic sensing capabilities of two 4H-SiC n+p diodes fabricated by NASA Glenn which only differ in the implanted ion species, nitrogen and phosphorus, and the implant activation annealing time. We use low- and high-field electrically detected magnetic resonance (EDMR) to investigate the defect structure used to sense magnetic fields as well as to evaluate the sensitivity. In addition, we expose these devices to high energy electron radiation to evaluate the defect sensing capability in a harsh radiation environment. The results from this work will allow us to tailor our processing methods to design a more optimal 4H-SiC pn diode for magnetic field sensing in harsh environments.",
author = "Cochrane, {Corey J.} and Hannes Kraus and Neudeck, {Philip G.} and David Spry and Waskiewicz, {Ryan J.} and James Ashton and Lenahan, {Patrick M.}",
note = "Funding Information: The research described here was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration., supported by PICASSO. Device fabrication at NASA Glenn Research Center was supported by both PICASSO and the NASA Aeronautics Transformative Technologies and Tools project. Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 ; Conference date: 17-09-2017 Through 22-09-2017",
year = "2018",
doi = "10.4028/www.scientific.net/MSF.924.988",
language = "English (US)",
isbn = "9783035711455",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "988--992",
editor = "Robert Stahlbush and Philip Neudeck and Anup Bhalla and Devaty, {Robert P.} and Michael Dudley and Aivars Lelis",
booktitle = "Silicon Carbide and Related Materials, 2017",
}