Magnetic field sensing with 4H SiC diodes: N vs P implantation

Corey J. Cochrane, Hannes Kraus, Philip G. Neudeck, David Spry, Ryan J. Waskiewicz, James Ashton, Patrick M. Lenahan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


We explore the magnetic sensing capabilities of two 4H-SiC n+p diodes fabricated by NASA Glenn which only differ in the implanted ion species, nitrogen and phosphorus, and the implant activation annealing time. We use low- and high-field electrically detected magnetic resonance (EDMR) to investigate the defect structure used to sense magnetic fields as well as to evaluate the sensitivity. In addition, we expose these devices to high energy electron radiation to evaluate the defect sensing capability in a harsh radiation environment. The results from this work will allow us to tailor our processing methods to design a more optimal 4H-SiC pn diode for magnetic field sensing in harsh environments.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials, 2017
EditorsRobert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars Lelis
PublisherTrans Tech Publications Ltd
Number of pages5
ISBN (Print)9783035711455
StatePublished - 2018
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017 - Columbia, United States
Duration: Sep 17 2017Sep 22 2017

Publication series

NameMaterials Science Forum
Volume924 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Magnetic field sensing with 4H SiC diodes: N vs P implantation'. Together they form a unique fingerprint.

Cite this