TY - JOUR
T1 - Magnetic resonance studies of trapping centers in high-κ dielectric films on silicon
AU - Lenahan, Patrick M.
AU - Conley, John F.
N1 - Funding Information:
Manuscript received November 24, 2004; revised January 18, 2005. The work at Penn State was sponsored by Intel Corporation through Semiconductor Research Corporation Custom Funding. P. M. Lenahan is with the Pennsylvania State University, University Park, PA 16802 USA. J. F. Conley, Jr., is with the Sharp Laboratories of America, Camas, WA 98607 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/TDMR.2005.845475
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/3
Y1 - 2005/3
N2 - The electrical properties of high dielectric constant materials being considered for replacements of SiO2 in metal-oxide semiconductor (MOS) field effect transistors are dominated by point defects. These point defects play important roles in determining the response of these films in almost any imaginable reliability problem. A fundamental understanding of these defects may help to alleviate the problems which they can cause. The best known methods for determining the structure of electrically active defects in MOS materials and devices are conventional electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR). In this paper, we review the limited ESR and EDMR work performed to date on high-κ materials. A discussion of magnetic resonance techniques as well as a brief overview of the extensively studied Si/SiO2 system is also included.
AB - The electrical properties of high dielectric constant materials being considered for replacements of SiO2 in metal-oxide semiconductor (MOS) field effect transistors are dominated by point defects. These point defects play important roles in determining the response of these films in almost any imaginable reliability problem. A fundamental understanding of these defects may help to alleviate the problems which they can cause. The best known methods for determining the structure of electrically active defects in MOS materials and devices are conventional electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR). In this paper, we review the limited ESR and EDMR work performed to date on high-κ materials. A discussion of magnetic resonance techniques as well as a brief overview of the extensively studied Si/SiO2 system is also included.
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U2 - 10.1109/TDMR.2005.845475
DO - 10.1109/TDMR.2005.845475
M3 - Article
AN - SCOPUS:20444459904
SN - 1530-4388
VL - 5
SP - 90
EP - 101
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
IS - 1
ER -