Magnetoresistance in an asymmetric Ga1-xMnxAs resonant tunneling diode

Edward Likovich, Kasey Russell, Wei Yi, Venkatesh Narayanamurti, Keh Chiang Ku, Meng Zhu, Nitin Samarth

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


In a GaMnAs/AlGaAs resonant tunneling diode (RTD) structure, we observe that both the magnitude and polarity of magnetoresistance are bias dependent when tunneling from a three-dimensional GaMnAs layer through a two-dimensional GaMnAs quantum well. This magnetoresistance behavior results from a shift of negative differential resistance features to higher bias as the relative alignment of the GaMnAs layer magnetizations is changed from parallel to antiparallel. Our observations agree with recent predictions from a theoretical analysis of a similar n -type structure by Ertler and Fabian, and our results suggest that further investigation into ferromagnetic RTD structures may result in significantly enhanced magnetoresistance.

Original languageEnglish (US)
Article number201307
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
StatePublished - Nov 13 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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