Magnetoresistance in underdoped HgBa2Ca2Cu3O8 films in high magnetic fields

Y. Tsabba; S. Reich; S. Nakamae; J. Schwartz

doi:10.1016/S0921-4534(98)00507-3

Magnetoresistance in underdoped HgBa₂Ca₂Cu₃O₈ films in high magnetic fields

Y. Tsabba, S. Reich, S. Nakamae, J. Schwartz

Research output: Contribution to journal › Article › peer-review

Abstract

Magnetoresistance in underdoped (T_c = 120 K) HgBa₂Ca₂Cu₃O₈ films prepared by a sol-gel method on Y_0.15Zr_0.85O_1.93 substrates was measured as function of field and temperature. In the temperature range 25-50 K, the resistivity is linearly dependent on the magnetic field and is dominated by thermally activated flux creep. The average activation energy required for flux depinning was estimated for several fields using the Anderson-Kim model. The depinning potential U and the critical resistivity ρ_c are field dependent and decrease with external magnetic field. For fields of up to 17 T, U varies from 0.026-0.016 eV. The magnetoresistance was studied for H∥c and H∥ab configurations to reveal the anisotropy. Steps in ρ vs. H were observed at low temperatures at the resistance onset. These steps are probably due to inhomogeneous distribution of the field inside the film.

Original language	English (US)
Pages (from-to)	237-240
Number of pages	4
Journal	Physica C: Superconductivity and its applications
Volume	307
Issue number	3-4
DOIs	https://doi.org/10.1016/S0921-4534(98)00507-3
State	Published - Oct 20 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/S0921-4534(98)00507-3

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title = "Magnetoresistance in underdoped HgBa2Ca2Cu3O8 films in high magnetic fields",

abstract = "Magnetoresistance in underdoped (Tc = 120 K) HgBa2Ca2Cu3O8 films prepared by a sol-gel method on Y0.15Zr0.85O1.93 substrates was measured as function of field and temperature. In the temperature range 25-50 K, the resistivity is linearly dependent on the magnetic field and is dominated by thermally activated flux creep. The average activation energy required for flux depinning was estimated for several fields using the Anderson-Kim model. The depinning potential U and the critical resistivity ρc are field dependent and decrease with external magnetic field. For fields of up to 17 T, U varies from 0.026-0.016 eV. The magnetoresistance was studied for H∥c and H∥ab configurations to reveal the anisotropy. Steps in ρ vs. H were observed at low temperatures at the resistance onset. These steps are probably due to inhomogeneous distribution of the field inside the film.",

author = "Y. Tsabba and S. Reich and S. Nakamae and J. Schwartz",

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T1 - Magnetoresistance in underdoped HgBa2Ca2Cu3O8 films in high magnetic fields

AU - Tsabba, Y.

AU - Reich, S.

AU - Nakamae, S.

AU - Schwartz, J.

PY - 1998/10/20

Y1 - 1998/10/20

N2 - Magnetoresistance in underdoped (Tc = 120 K) HgBa2Ca2Cu3O8 films prepared by a sol-gel method on Y0.15Zr0.85O1.93 substrates was measured as function of field and temperature. In the temperature range 25-50 K, the resistivity is linearly dependent on the magnetic field and is dominated by thermally activated flux creep. The average activation energy required for flux depinning was estimated for several fields using the Anderson-Kim model. The depinning potential U and the critical resistivity ρc are field dependent and decrease with external magnetic field. For fields of up to 17 T, U varies from 0.026-0.016 eV. The magnetoresistance was studied for H∥c and H∥ab configurations to reveal the anisotropy. Steps in ρ vs. H were observed at low temperatures at the resistance onset. These steps are probably due to inhomogeneous distribution of the field inside the film.

AB - Magnetoresistance in underdoped (Tc = 120 K) HgBa2Ca2Cu3O8 films prepared by a sol-gel method on Y0.15Zr0.85O1.93 substrates was measured as function of field and temperature. In the temperature range 25-50 K, the resistivity is linearly dependent on the magnetic field and is dominated by thermally activated flux creep. The average activation energy required for flux depinning was estimated for several fields using the Anderson-Kim model. The depinning potential U and the critical resistivity ρc are field dependent and decrease with external magnetic field. For fields of up to 17 T, U varies from 0.026-0.016 eV. The magnetoresistance was studied for H∥c and H∥ab configurations to reveal the anisotropy. Steps in ρ vs. H were observed at low temperatures at the resistance onset. These steps are probably due to inhomogeneous distribution of the field inside the film.

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Magnetoresistance in underdoped HgBa₂Ca₂Cu₃O₈ films in high magnetic fields

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