Making the mid-infrared nano with designer plasmonic materials

S. Law, J. Felts, C. Roberts, V. A. Podolskiy, W. P. King, D. Wasserman

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Here we demonstrate a new class of designer plasmonic materials for use in the mid-infrared (mid-IR) region of the electromagnetic spectrum. By heavily doping epitaxially-grown semiconductor materials, we are able to grow single-crystal materials whose optical properties in the mid-IR mimic those of metals at shorter wavelengths. We demonstrate materials with plasma frequencies from 5.5 × 15μm and low losses, compared to their shortwavelength counterparts. In addition, we demonstrate the ability of subwavelength particles formed from our materials to support localized surface plasmon resonances, and measure the near-field absorption of these structures using a novel nanoscale infrared spectroscopy technique. Finally, we show good agreement between our observed results and analytical and finite-element models of our materials and structures. The results presented offer a path towards nanoscale confinement of light with micron-scale wavelengths.

Original languageEnglish (US)
Title of host publicationOptoelectronic Devices and Integration IV
StatePublished - 2012
EventOptoelectronic Devices and Integration IV - Beijing, China
Duration: Nov 5 2012Nov 7 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceOptoelectronic Devices and Integration IV

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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