Manganese Doping of Monolayer MoS                         2: The Substrate Is Critical

Kehao Zhang; Simin Feng; Junjie Wang; Angelica Azcatl; Ning Lu; Rafik Addou; Nan Wang; Chanjing Zhou; Jordan Lerach; Vincent Bojan; Moon J. Kim; Long Qing Chen; Robert M. Wallace; Mauricio Terrones; Jun Zhu; Joshua A. Robinson

doi:10.1021/acs.nanolett.5b02315

Manganese Doping of Monolayer MoS ₂: The Substrate Is Critical

Kehao Zhang, Simin Feng, Junjie Wang, Angelica Azcatl, Ning Lu, Rafik Addou, Nan Wang, Chanjing Zhou, Jordan Lerach, Vincent Bojan, Moon J. Kim, Long Qing Chen, Robert M. Wallace, Mauricio Terrones, Jun Zhu, Joshua A. Robinson

Research output: Contribution to journal › Article › peer-review

373 Scopus citations

Abstract

Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS ₂ ) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS ₂ leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS ₂ , while substrates with reactive surface terminations (i.e., SiO ₂ and sapphire) preclude Mn incorporation and merely lead to defective MoS ₂ . The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements.

Original language	English (US)
Pages (from-to)	6586-6591
Number of pages	6
Journal	Nano letters
Volume	15
Issue number	10
DOIs	https://doi.org/10.1021/acs.nanolett.5b02315
State	Published - Oct 14 2015

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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title = "Manganese Doping of Monolayer MoS 2: The Substrate Is Critical",

abstract = " Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS 2 ) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS 2 leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS 2 , while substrates with reactive surface terminations (i.e., SiO 2 and sapphire) preclude Mn incorporation and merely lead to defective MoS 2 . The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements. ",

author = "Kehao Zhang and Simin Feng and Junjie Wang and Angelica Azcatl and Ning Lu and Rafik Addou and Nan Wang and Chanjing Zhou and Jordan Lerach and Vincent Bojan and Kim, {Moon J.} and Chen, {Long Qing} and Wallace, {Robert M.} and Mauricio Terrones and Jun Zhu and Robinson, {Joshua A.}",

year = "2015",

month = oct,

day = "14",

doi = "10.1021/acs.nanolett.5b02315",

language = "English (US)",

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TY - JOUR

T1 - Manganese Doping of Monolayer MoS 2

T2 - The Substrate Is Critical

AU - Zhang, Kehao

AU - Feng, Simin

AU - Wang, Junjie

AU - Azcatl, Angelica

AU - Lu, Ning

AU - Addou, Rafik

AU - Wang, Nan

AU - Zhou, Chanjing

AU - Lerach, Jordan

AU - Bojan, Vincent

AU - Kim, Moon J.

AU - Chen, Long Qing

AU - Wallace, Robert M.

AU - Terrones, Mauricio

AU - Zhu, Jun

AU - Robinson, Joshua A.

PY - 2015/10/14

Y1 - 2015/10/14

N2 - Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS 2 ) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS 2 leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS 2 , while substrates with reactive surface terminations (i.e., SiO 2 and sapphire) preclude Mn incorporation and merely lead to defective MoS 2 . The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements.

AB - Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS 2 ) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS 2 leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS 2 , while substrates with reactive surface terminations (i.e., SiO 2 and sapphire) preclude Mn incorporation and merely lead to defective MoS 2 . The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements.

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Manganese Doping of Monolayer MoS ₂: The Substrate Is Critical

Abstract

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