Manufacturing Challenges of Czochralski Growth and Fabrication of 2-inch Semi-Insulating β-Ga₂O₃ Substrates

Keyphrases

• Ga2O3 100%
• Semi-insulating 100%
• Manufacturing Difficulty 100%
• Czochralski Growth 100%
• Boule 75%
• Research Laboratories 50%
• Wafer 50%
• Crystallization 25%
• Dislocation 25%
• Single Crystal 25%
• Processing Stages 25%
• Air Force 25%
• Penn State University 25%
• Damage Depth 25%
• Fabrication Methods 25%
• High Electric Field 25%
• Surface Roughness 25%
• Etching Process 25%
• Mapping Method 25%
• Czochralski Method 25%
• Mechanical Stress 25%
• Wide Band Gap Semiconductors 25%
• Crystal Quality 25%
• Manufacturing Methods 25%
• Subsurface Damage 25%
• Rocking Curve 25%
• Average Surface Roughness 25%
• Beta Phase 25%
• Compound Semiconductors 25%
• Process Yield 25%
• Defect Density 25%
• Polishing Process 25%
• Cleavage Plane 25%
• Wafer Processing 25%
• Field-breakdown 25%
• High Removal Efficiency 25%
• Power Switching 25%
• Processing Difficulty 25%
• High Voltage Power Supply 25%
• Ultra-wide Bandgap 25%
• Gallium Oxide 25%
• β-Ga2O3 Crystal 25%

Engineering

• Research Laboratories 100%
• Subsurface 50%
• Grinding (Machining) 50%
• Mechanical Stress 50%
• Crystalline Quality 50%
• Processing Step 50%
• High Electric Field 50%
• Removal Rate 50%
• Switching Frequency 50%
• Process Yield 50%
• Defect Density 50%
• Manufacturing Technique 50%
• Compound Semiconductor 50%
• Polishing Process 50%
• Wide Bandgap Semiconductor 50%
• Average Surface Roughness 50%
• Mapping Method 50%

Material Science

• Crystal Growth From Melt 100%
• Surface Roughness 66%
• Oxide Compound 33%
• Transistor 33%
• Mechanical Stress 33%
• Gallium 33%
• Compound Semiconductor 33%
• Defect Density 33%
• Wide Bandgap Semiconductor 33%