Mathematical simulation analysis for electrical properties of silicon solar cells with ultra-small textured surface

A mathematical model about silicon nanowire solar cell was developed under fully consideration of geometric properties and low reflectivity of the solar cell in nanowire structure. Effects of length of the nanowire solar cells unit, defect density of silicon material and surface hole recombination velocity on short circuit current, open circuit voltage and conversion efficiency of the nanowire solar cells were analyzed by the model. The simulated results show that in design and production process of silicon solar cells with nanowire structure, a low reflectance is only one key point of high-performance solar cell, and the surface recombination velocity, the nanowire length and the defect density are also important factors, they should be comprehensive considered. When the surface hole recombination velocity and defect density is bigger, the length of nanowire should not be too long.