Maximizing electrical activation of ion-implanted Si in In 0.53Ga0.47As

A. G. Lind, N. G. Rudawski, N. J. Vito, C. Hatem, M. C. Ridgway, R. Hengstebeck, B. R. Yates, K. S. Jones

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


A relationship between the electrical activation of Si in ion-implanted In0.53Ga0.47As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In0.53Ga0.47As by providing a greater number of possible sites for substitutional incorporation of Si into the crystal lattice upon subsequent annealing.

Original languageEnglish (US)
Article number232102
JournalApplied Physics Letters
Issue number23
StatePublished - Dec 2 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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