Maximizing electrical activation of ion-implanted Si in In 0.53Ga0.47As

A. G. Lind; N. G. Rudawski; N. J. Vito; C. Hatem; M. C. Ridgway; R. Hengstebeck; B. R. Yates; K. S. Jones

doi:10.1063/1.4835097

Maximizing electrical activation of ion-implanted Si in In _0.53Ga_0.47As

A. G. Lind
, N. G. Rudawski
, N. J. Vito
, C. Hatem
, M. C. Ridgway
, R. Hengstebeck
, B. R. Yates
, K. S. Jones

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A relationship between the electrical activation of Si in ion-implanted In_0.53Ga_0.47As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si⁺ implantation results in enhanced electrical activation of Si in In_0.53Ga_0.47As by providing a greater number of possible sites for substitutional incorporation of Si into the crystal lattice upon subsequent annealing.

Original language	English (US)
Article number	232102
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4835097
State	Published - Dec 2 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4835097

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title = "Maximizing electrical activation of ion-implanted Si in In 0.53Ga0.47As",

abstract = "A relationship between the electrical activation of Si in ion-implanted In0.53Ga0.47As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In0.53Ga0.47As by providing a greater number of possible sites for substitutional incorporation of Si into the crystal lattice upon subsequent annealing.",

author = "Lind, \{A. G.\} and Rudawski, \{N. G.\} and Vito, \{N. J.\} and C. Hatem and Ridgway, \{M. C.\} and R. Hengstebeck and Yates, \{B. R.\} and Jones, \{K. S.\}",

note = "Funding Information: The authors acknowledge the Semiconductor Research Corporation for funding this work. The Major Analytical Instrumentation Center at the University of Florida is acknowledged for use of the transmission electron microscopy and focused ion beam facilities.",

year = "2013",

month = dec,

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doi = "10.1063/1.4835097",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Maximizing electrical activation of ion-implanted Si in In 0.53Ga0.47As

AU - Lind, A. G.

AU - Rudawski, N. G.

AU - Vito, N. J.

AU - Hatem, C.

AU - Ridgway, M. C.

AU - Hengstebeck, R.

AU - Yates, B. R.

AU - Jones, K. S.

N1 - Funding Information: The authors acknowledge the Semiconductor Research Corporation for funding this work. The Major Analytical Instrumentation Center at the University of Florida is acknowledged for use of the transmission electron microscopy and focused ion beam facilities.

PY - 2013/12/2

Y1 - 2013/12/2

N2 - A relationship between the electrical activation of Si in ion-implanted In0.53Ga0.47As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In0.53Ga0.47As by providing a greater number of possible sites for substitutional incorporation of Si into the crystal lattice upon subsequent annealing.

AB - A relationship between the electrical activation of Si in ion-implanted In0.53Ga0.47As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In0.53Ga0.47As by providing a greater number of possible sites for substitutional incorporation of Si into the crystal lattice upon subsequent annealing.

UR - https://www.scopus.com/pages/publications/84889792770

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U2 - 10.1063/1.4835097

DO - 10.1063/1.4835097

M3 - Article

AN - SCOPUS:84889792770

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232102

ER -

Maximizing electrical activation of ion-implanted Si in In _0.53Ga_0.47As

Abstract

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