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Maximizing electrical activation of ion-implanted Si in In 0.53Ga0.47As

  • A. G. Lind
  • , N. G. Rudawski
  • , N. J. Vito
  • , C. Hatem
  • , M. C. Ridgway
  • , R. Hengstebeck
  • , B. R. Yates
  • , K. S. Jones

Research output: Contribution to journal › Article › peer-review

15   Link opens in a new tab Scopus citations

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