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Dive into the research topics of 'Maximizing electrical activation of ion-implanted Si in In 0.53Ga0.47As'. Together they form a unique fingerprint.- Sort by
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A. G. Lind, N. G. Rudawski, N. J. Vito, C. Hatem, M. C. Ridgway, R. Hengstebeck, B. R. Yates, K. S. Jones
Research output: Contribution to journal › Article › peer-review