TY - JOUR
T1 - MBE growth of PbSe thin film with a 9×105 cm-2 etch-pits density on patterned (1 1 1)-oriented Si substrate
AU - Zhao, F.
AU - Ma, J.
AU - Weng, B.
AU - Li, D.
AU - Bi, G.
AU - Chen, A.
AU - Xu, J.
AU - Shi, Z.
PY - 2010/9/15
Y1 - 2010/9/15
N2 - PbSe thin film was grown on a patterned Si substrate with (1 1 1)-orientation by molecular-beam epitaxy (MBE). On the mesa, a low dislocation density of 9×105 cm-2 was confirmed by the etch-pits density (EPD) wet-etching technique. The photoluminescence (PL) intensity at room temperature from the low dislocation PbSe film was much higher than that from the PbSe film grown on the planar area, which further indicated the high-quality of PbSe thin film grown on patterned Si substrate.
AB - PbSe thin film was grown on a patterned Si substrate with (1 1 1)-orientation by molecular-beam epitaxy (MBE). On the mesa, a low dislocation density of 9×105 cm-2 was confirmed by the etch-pits density (EPD) wet-etching technique. The photoluminescence (PL) intensity at room temperature from the low dislocation PbSe film was much higher than that from the PbSe film grown on the planar area, which further indicated the high-quality of PbSe thin film grown on patterned Si substrate.
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U2 - 10.1016/j.jcrysgro.2010.05.041
DO - 10.1016/j.jcrysgro.2010.05.041
M3 - Article
AN - SCOPUS:77956183654
SN - 0022-0248
VL - 312
SP - 2695
EP - 2698
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 19
ER -