Measurement of the thermal conductance of the graphene/ SiO2 interface

Kin Fai Mak; Chun Hung Lui; Tony F. Heinz

doi:10.1063/1.3511537

Measurement of the thermal conductance of the graphene/ SiO₂ interface

Kin Fai Mak, Chun Hung Lui, Tony F. Heinz

Physics

Research output: Contribution to journal › Article › peer-review

169 Scopus citations

Abstract

We have examined the interfacial thermal conductance G_K of single and multilayer graphene samples prepared on fused SiO₂ substrates by mechanical exfoliation of graphite. By using an ultrafast optical pump pulse and monitoring the transient reflectivity on the picosecond time scale, we obtained an average value of G_K of G_K = 5000 W/ cm² K for the graphene/ SiO₂ interface at room temperature. We observed significant variation in G_K between individual samples, but found no systematic dependence on the thickness of the graphene layers.

Original language	English (US)
Article number	221904
Journal	Applied Physics Letters
Volume	97
Issue number	22
DOIs	https://doi.org/10.1063/1.3511537
State	Published - Nov 29 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3511537

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title = "Measurement of the thermal conductance of the graphene/ SiO2 interface",

abstract = "We have examined the interfacial thermal conductance GK of single and multilayer graphene samples prepared on fused SiO2 substrates by mechanical exfoliation of graphite. By using an ultrafast optical pump pulse and monitoring the transient reflectivity on the picosecond time scale, we obtained an average value of GK of GK = 5000 W/ cm2 K for the graphene/ SiO2 interface at room temperature. We observed significant variation in GK between individual samples, but found no systematic dependence on the thickness of the graphene layers.",

author = "Mak, {Kin Fai} and Lui, {Chun Hung} and Heinz, {Tony F.}",

note = "Funding Information: We thank Dr. Yang Wu, Dr. Daohua Song, and Dr. Hugen Yan for fruitful discussions. We acknowledge support from the Nanoscale Science and Engineering Initiative of the National Science Foundation (Grant No. CHE-0641523) and from the MURI Program of the Air Force Office of Scientific Research (Grant No. FA9550-09-1-0705).",

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T1 - Measurement of the thermal conductance of the graphene/ SiO2 interface

AU - Mak, Kin Fai

AU - Lui, Chun Hung

AU - Heinz, Tony F.

N1 - Funding Information: We thank Dr. Yang Wu, Dr. Daohua Song, and Dr. Hugen Yan for fruitful discussions. We acknowledge support from the Nanoscale Science and Engineering Initiative of the National Science Foundation (Grant No. CHE-0641523) and from the MURI Program of the Air Force Office of Scientific Research (Grant No. FA9550-09-1-0705).

PY - 2010/11/29

Y1 - 2010/11/29

N2 - We have examined the interfacial thermal conductance GK of single and multilayer graphene samples prepared on fused SiO2 substrates by mechanical exfoliation of graphite. By using an ultrafast optical pump pulse and monitoring the transient reflectivity on the picosecond time scale, we obtained an average value of GK of GK = 5000 W/ cm2 K for the graphene/ SiO2 interface at room temperature. We observed significant variation in GK between individual samples, but found no systematic dependence on the thickness of the graphene layers.

AB - We have examined the interfacial thermal conductance GK of single and multilayer graphene samples prepared on fused SiO2 substrates by mechanical exfoliation of graphite. By using an ultrafast optical pump pulse and monitoring the transient reflectivity on the picosecond time scale, we obtained an average value of GK of GK = 5000 W/ cm2 K for the graphene/ SiO2 interface at room temperature. We observed significant variation in GK between individual samples, but found no systematic dependence on the thickness of the graphene layers.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Measurement of the thermal conductance of the graphene/ SiO₂ interface

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