Measurements of residual stresses in thin films deposited on silicon wafers by indentation fracture

T. Y. Zhang; L. Q. Chen; R. Fu

doi:10.1016/S1359-6454(99)00248-7

Measurements of residual stresses in thin films deposited on silicon wafers by indentation fracture

T. Y. Zhang, L. Q. Chen, R. Fu

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

A semi-empirical formula is proposed to assess residual stresses in SiO₂ and Cr thin films deposited on Si wafers using Vickers indentation fracture tests. The formula indicates that the ratio of the indentation load to the cubic of square root of the crack length is linearly proportional to the reciprocal of the square root of the crack length, the magnitude of the residual stress, and the film thickness. Wafer curvature measurements are conducted to calibrate the dimensionless parameters in the proposed formula. The experimental results agree well with the theoretical prediction and the residual stresses in the SiO₂ and Cr thin films are evaluated to be -358 and 1095 MPa, respectively.

Original language	English (US)
Pages (from-to)	3869-3878
Number of pages	10
Journal	Acta Materialia
Volume	47
Issue number	14
DOIs	https://doi.org/10.1016/S1359-6454(99)00248-7
State	Published - Oct 19 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Polymers and Plastics
Metals and Alloys

Access to Document

10.1016/S1359-6454(99)00248-7

Cite this

@article{790849567ae54a8885fc59c4f6dd592a,

title = "Measurements of residual stresses in thin films deposited on silicon wafers by indentation fracture",

abstract = "A semi-empirical formula is proposed to assess residual stresses in SiO2 and Cr thin films deposited on Si wafers using Vickers indentation fracture tests. The formula indicates that the ratio of the indentation load to the cubic of square root of the crack length is linearly proportional to the reciprocal of the square root of the crack length, the magnitude of the residual stress, and the film thickness. Wafer curvature measurements are conducted to calibrate the dimensionless parameters in the proposed formula. The experimental results agree well with the theoretical prediction and the residual stresses in the SiO2 and Cr thin films are evaluated to be -358 and 1095 MPa, respectively.",

author = "Zhang, {T. Y.} and Chen, {L. Q.} and R. Fu",

note = "Funding Information: The authors thank Professor B. R. Lawn for his careful reading of this manuscript and suggestions. Thanks are also given to Dr M. H. Zhao for helpful discussion about the free-surface effect. Technical assistance from Dr X. Zhang and Mr Y. J. Su are also gratefully acknowledged. This work is supported by a grant (RGC grant HKUST713/95E) from the Research Grants Council of the Hong Kong Special Administrative Region, People's Republic of China. ",

year = "1999",

month = oct,

day = "19",

doi = "10.1016/S1359-6454(99)00248-7",

language = "English (US)",

volume = "47",

pages = "3869--3878",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Elsevier Limited",

number = "14",

}

TY - JOUR

T1 - Measurements of residual stresses in thin films deposited on silicon wafers by indentation fracture

AU - Zhang, T. Y.

AU - Chen, L. Q.

AU - Fu, R.

N1 - Funding Information: The authors thank Professor B. R. Lawn for his careful reading of this manuscript and suggestions. Thanks are also given to Dr M. H. Zhao for helpful discussion about the free-surface effect. Technical assistance from Dr X. Zhang and Mr Y. J. Su are also gratefully acknowledged. This work is supported by a grant (RGC grant HKUST713/95E) from the Research Grants Council of the Hong Kong Special Administrative Region, People's Republic of China.

PY - 1999/10/19

Y1 - 1999/10/19

N2 - A semi-empirical formula is proposed to assess residual stresses in SiO2 and Cr thin films deposited on Si wafers using Vickers indentation fracture tests. The formula indicates that the ratio of the indentation load to the cubic of square root of the crack length is linearly proportional to the reciprocal of the square root of the crack length, the magnitude of the residual stress, and the film thickness. Wafer curvature measurements are conducted to calibrate the dimensionless parameters in the proposed formula. The experimental results agree well with the theoretical prediction and the residual stresses in the SiO2 and Cr thin films are evaluated to be -358 and 1095 MPa, respectively.

AB - A semi-empirical formula is proposed to assess residual stresses in SiO2 and Cr thin films deposited on Si wafers using Vickers indentation fracture tests. The formula indicates that the ratio of the indentation load to the cubic of square root of the crack length is linearly proportional to the reciprocal of the square root of the crack length, the magnitude of the residual stress, and the film thickness. Wafer curvature measurements are conducted to calibrate the dimensionless parameters in the proposed formula. The experimental results agree well with the theoretical prediction and the residual stresses in the SiO2 and Cr thin films are evaluated to be -358 and 1095 MPa, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0033350496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033350496&partnerID=8YFLogxK

U2 - 10.1016/S1359-6454(99)00248-7

DO - 10.1016/S1359-6454(99)00248-7

M3 - Article

AN - SCOPUS:0033350496

SN - 1359-6454

VL - 47

SP - 3869

EP - 3878

JO - Acta Materialia

JF - Acta Materialia

IS - 14

ER -

Measurements of residual stresses in thin films deposited on silicon wafers by indentation fracture

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this