Mechanisms of interface trap buildup and annealing during elevated temperature irradiation

D. R. Hughart; R. D. Schrimpf; D. M. Fleetwood; B. R. Tuttle; S. T. Pantelides

doi:10.1109/TNS.2011.2171364

Mechanisms of interface trap buildup and annealing during elevated temperature irradiation

D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, B. R. Tuttle, S. T. Pantelides

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Both enhanced interface trap buildup and interface trap annealing can occur during elevated temperature irradiation (ETI), depending on the temperature, total dose, and dose rate. In this paper we describe mechanisms that govern the rate-limiting processes of interface trap buildup and annealing during ETI. Hydrogenated oxygen vacancies can facilitate hydrogen dimerization at elevated temperatures. This results in the removal of protons that can create interface traps, so degradation is suppressed. Hydrogen dimerization becomes more competitive with degradation mechanisms as the concentration of protons near the interface increases and/or as temperature increases.

Original language	English (US)
Article number	6072293
Pages (from-to)	2930-2936
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	58
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/TNS.2011.2171364
State	Published - Dec 2011

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2011.2171364

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abstract = "Both enhanced interface trap buildup and interface trap annealing can occur during elevated temperature irradiation (ETI), depending on the temperature, total dose, and dose rate. In this paper we describe mechanisms that govern the rate-limiting processes of interface trap buildup and annealing during ETI. Hydrogenated oxygen vacancies can facilitate hydrogen dimerization at elevated temperatures. This results in the removal of protons that can create interface traps, so degradation is suppressed. Hydrogen dimerization becomes more competitive with degradation mechanisms as the concentration of protons near the interface increases and/or as temperature increases.",

author = "Hughart, {D. R.} and Schrimpf, {R. D.} and Fleetwood, {D. M.} and Tuttle, {B. R.} and Pantelides, {S. T.}",

note = "Funding Information: Manuscript received July 22, 2011; revised September 09, 2011; accepted September 28, 2011. Date of publication November 08, 2011; date of current version December 14, 2011. This work was supported by the AFOSR, the US Navy, and the Defense Threat Reduction Agency.",

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AU - Pantelides, S. T.

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Mechanisms of interface trap buildup and annealing during elevated temperature irradiation

Abstract

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