Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides

Nicole L. Rowsey; Mark E. Law; Ronald D. Schrimpf; Daniel M. Fleetwood; Blair R. Tuttle; Sokrates T. Pantelides

doi:10.1109/TNS.2012.2222669

Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides

Nicole L. Rowsey, Mark E. Law, Ronald D. Schrimpf, Daniel M. Fleetwood, Blair R. Tuttle, Sokrates T. Pantelides

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

A model for radiation-induced interface-trap buildup distinguishes among the contributions of hydrogen dimerization, electron recombination, and electric field mechanisms, quantitatively explaining time-dependent and true dose rate effects in irradiated bipolar isolation oxides. Hydrogen dimerization is the dominant ELDRS mechanism for devices exposed to medium H2 concentrations (1% per volume), whereas H2 cracking dominates as H2 concentration is increased further. Electron recombination mechanisms contribute at high dose rates (> 100 rad(SiO2)/s), but are not the dominant ELDRS mechanism at dose rates lower than 100 rad(SiO2)/s).

Original language	English (US)
Pages (from-to)	3069-3076
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	59
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2012.2222669
State	Published - Dec 2012

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides",

abstract = "A model for radiation-induced interface-trap buildup distinguishes among the contributions of hydrogen dimerization, electron recombination, and electric field mechanisms, quantitatively explaining time-dependent and true dose rate effects in irradiated bipolar isolation oxides. Hydrogen dimerization is the dominant ELDRS mechanism for devices exposed to medium H2 concentrations (1% per volume), whereas H2 cracking dominates as H2 concentration is increased further. Electron recombination mechanisms contribute at high dose rates (> 100 rad(SiO2)/s), but are not the dominant ELDRS mechanism at dose rates lower than 100 rad(SiO2)/s).",

author = "Rowsey, {Nicole L.} and Law, {Mark E.} and Schrimpf, {Ronald D.} and Fleetwood, {Daniel M.} and Tuttle, {Blair R.} and Pantelides, {Sokrates T.}",

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AU - Fleetwood, Daniel M.

AU - Tuttle, Blair R.

AU - Pantelides, Sokrates T.

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AB - A model for radiation-induced interface-trap buildup distinguishes among the contributions of hydrogen dimerization, electron recombination, and electric field mechanisms, quantitatively explaining time-dependent and true dose rate effects in irradiated bipolar isolation oxides. Hydrogen dimerization is the dominant ELDRS mechanism for devices exposed to medium H2 concentrations (1% per volume), whereas H2 cracking dominates as H2 concentration is increased further. Electron recombination mechanisms contribute at high dose rates (> 100 rad(SiO2)/s), but are not the dominant ELDRS mechanism at dose rates lower than 100 rad(SiO2)/s).

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Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides

Abstract

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