Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module

Danielle Lester; Mark Cairnie; Christina Dimarino; Sang Woo Han; Rongming Chu

doi:10.1109/ECCE53617.2023.10362060

Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module

Danielle Lester
, Mark Cairnie
, Christina Dimarino
, Sang Woo Han
, Rongming Chu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work demonstrates a novel charge-balanced gallium nitride (GaN) super-heterojunction Schottky barrier diode (SHJ-SBD) through a co-packaging scheme with a silicon carbide (SiC) MOSFET in a chopper configuration using a package design with a power loop inductance of 10 nH. Novel GaN devices are often demonstrated unpackaged. Co-packaging the GaN SHJ-SBD as a free-wheeling diode enables testing of the switching performance with minimal stray inductance between the MOSFET and the diode. It also allows the device to be demonstrated in packaged applications, as opposed to commonly characterizing bare devices. To the best of the author's knowledge, this is the first packaged GaN SHJ-SBD demonstration. The static characterization results indicate successful co-packaging of the module at 2 kV, 1A. The double pulse test (DPT) setup is detailed, and the results at 600 V are analyzed.

Original language	English (US)
Title of host publication	2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	5462-5467
Number of pages	6
ISBN (Electronic)	9798350316445
DOIs	https://doi.org/10.1109/ECCE53617.2023.10362060
State	Published - 2023
Event	2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 - Nashville, United States Duration: Oct 29 2023 → Nov 2 2023

Publication series

Name	2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023

Conference

Conference	2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
Country/Territory	United States
City	Nashville
Period	10/29/23 → 11/2/23

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering

Access to Document

10.1109/ECCE53617.2023.10362060

Cite this

Lester, D., Cairnie, M., Dimarino, C., Han, S. W., & Chu, R. (2023). Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module. In 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 (pp. 5462-5467). (2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE53617.2023.10362060

@inproceedings{3809c556db2448f392a82a2d2713146c,

title = "Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module",

abstract = "This work demonstrates a novel charge-balanced gallium nitride (GaN) super-heterojunction Schottky barrier diode (SHJ-SBD) through a co-packaging scheme with a silicon carbide (SiC) MOSFET in a chopper configuration using a package design with a power loop inductance of 10 nH. Novel GaN devices are often demonstrated unpackaged. Co-packaging the GaN SHJ-SBD as a free-wheeling diode enables testing of the switching performance with minimal stray inductance between the MOSFET and the diode. It also allows the device to be demonstrated in packaged applications, as opposed to commonly characterizing bare devices. To the best of the author's knowledge, this is the first packaged GaN SHJ-SBD demonstration. The static characterization results indicate successful co-packaging of the module at 2 kV, 1A. The double pulse test (DPT) setup is detailed, and the results at 600 V are analyzed.",

author = "Danielle Lester and Mark Cairnie and Christina Dimarino and Han, \{Sang Woo\} and Rongming Chu",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 ; Conference date: 29-10-2023 Through 02-11-2023",

year = "2023",

doi = "10.1109/ECCE53617.2023.10362060",

language = "English (US)",

series = "2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "5462--5467",

booktitle = "2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023",

address = "United States",

}

Lester, D, Cairnie, M, Dimarino, C, Han, SW & Chu, R 2023, Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module. in 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023. 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023, Institute of Electrical and Electronics Engineers Inc., pp. 5462-5467, 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023, Nashville, United States, 10/29/23. https://doi.org/10.1109/ECCE53617.2023.10362060

Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module. / Lester, Danielle; Cairnie, Mark; Dimarino, Christina et al.
2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 5462-5467 (2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module

AU - Lester, Danielle

AU - Cairnie, Mark

AU - Dimarino, Christina

AU - Han, Sang Woo

AU - Chu, Rongming

PY - 2023

Y1 - 2023

N2 - This work demonstrates a novel charge-balanced gallium nitride (GaN) super-heterojunction Schottky barrier diode (SHJ-SBD) through a co-packaging scheme with a silicon carbide (SiC) MOSFET in a chopper configuration using a package design with a power loop inductance of 10 nH. Novel GaN devices are often demonstrated unpackaged. Co-packaging the GaN SHJ-SBD as a free-wheeling diode enables testing of the switching performance with minimal stray inductance between the MOSFET and the diode. It also allows the device to be demonstrated in packaged applications, as opposed to commonly characterizing bare devices. To the best of the author's knowledge, this is the first packaged GaN SHJ-SBD demonstration. The static characterization results indicate successful co-packaging of the module at 2 kV, 1A. The double pulse test (DPT) setup is detailed, and the results at 600 V are analyzed.

AB - This work demonstrates a novel charge-balanced gallium nitride (GaN) super-heterojunction Schottky barrier diode (SHJ-SBD) through a co-packaging scheme with a silicon carbide (SiC) MOSFET in a chopper configuration using a package design with a power loop inductance of 10 nH. Novel GaN devices are often demonstrated unpackaged. Co-packaging the GaN SHJ-SBD as a free-wheeling diode enables testing of the switching performance with minimal stray inductance between the MOSFET and the diode. It also allows the device to be demonstrated in packaged applications, as opposed to commonly characterizing bare devices. To the best of the author's knowledge, this is the first packaged GaN SHJ-SBD demonstration. The static characterization results indicate successful co-packaging of the module at 2 kV, 1A. The double pulse test (DPT) setup is detailed, and the results at 600 V are analyzed.

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M3 - Conference contribution

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T3 - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023

SP - 5462

EP - 5467

BT - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023

Y2 - 29 October 2023 through 2 November 2023

ER -

Lester D, Cairnie M, Dimarino C, Han SW, Chu R. Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module. In 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 5462-5467. (2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023). doi: 10.1109/ECCE53617.2023.10362060

Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module

Abstract

Publication series

Conference

UN SDGs

All Science Journal Classification (ASJC) codes

Access to Document

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