Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module

This work demonstrates a novel charge-balanced gallium nitride (GaN) super-heterojunction Schottky barrier diode (SHJ-SBD) through a co-packaging scheme with a silicon carbide (SiC) MOSFET in a chopper configuration using a package design with a power loop inductance of 10 nH. Novel GaN devices are often demonstrated unpackaged. Co-packaging the GaN SHJ-SBD as a free-wheeling diode enables testing of the switching performance with minimal stray inductance between the MOSFET and the diode. It also allows the device to be demonstrated in packaged applications, as opposed to commonly characterizing bare devices. To the best of the author's knowledge, this is the first packaged GaN SHJ-SBD demonstration. The static characterization results indicate successful co-packaging of the module at 2 kV, 1A. The double pulse test (DPT) setup is detailed, and the results at 600 V are analyzed.