Memory switching in Al-Al2O3-Al thin film devices

Pierre E. Schmidt; Cruz Da ́vila; Paul Esqueda; Roberto Callarotti

doi:10.1016/0022-4596(75)90326-6

Memory switching in Al-Al₂O₃-Al thin film devices

Pierre E. Schmidt, Cruz Da ́vila, Paul Esqueda, Roberto Callarotti

Penn State Berks

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Original language	English (US)
Number of pages	1
Journal	Journal of Solid State Chemistry
Volume	12
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-4596(75)90326-6
State	Published - Jan 15 1975

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Physical and Theoretical Chemistry
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-4596(75)90326-6

Cite this

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title = "Memory switching in Al-Al2O3-Al thin film devices",

author = "Schmidt, {Pierre E.} and {Da{\' }vila}, Cruz and Paul Esqueda and Roberto Callarotti",

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T1 - Memory switching in Al-Al2O3-Al thin film devices

AU - Schmidt, Pierre E.

AU - Da ́vila, Cruz

AU - Esqueda, Paul

AU - Callarotti, Roberto

PY - 1975/1/15

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DO - 10.1016/0022-4596(75)90326-6

M3 - Article

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SN - 0022-4596

VL - 12

JO - Journal of Solid State Chemistry

JF - Journal of Solid State Chemistry

IS - 3-4

ER -

Memory switching in Al-Al2O3-Al thin film devices

All Science Journal Classification (ASJC) codes

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Memory switching in Al-Al₂O₃-Al thin film devices