TY - JOUR
T1 - Metal-induced solid-phase crystallization of hydrogenated amorphous silicon
T2 - dependence on metal type and annealing temperature
AU - Wang, Y. Z.
AU - Awadelkarim, Osama O.
PY - 2000/5/1
Y1 - 2000/5/1
N2 - We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.
AB - We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.
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U2 - 10.1007/s003390051084
DO - 10.1007/s003390051084
M3 - Article
AN - SCOPUS:0034187560
SN - 0947-8396
VL - 70
SP - 587
EP - 590
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 5
ER -