We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.
|Original language||English (US)|
|Number of pages||4|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - May 1 2000|
All Science Journal Classification (ASJC) codes
- Materials Science(all)