Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature

Y. Z. Wang; Osama O. Awadelkarim

doi:10.1007/s003390051084

Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature

Y. Z. Wang
, Osama O. Awadelkarim

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.

Original language	English (US)
Pages (from-to)	587-590
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	70
Issue number	5
DOIs	https://doi.org/10.1007/s003390051084
State	Published - May 1 2000

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science

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10.1007/s003390051084

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title = "Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature",

abstract = "We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.",

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journal = "Applied Physics A: Materials Science and Processing",

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T2 - dependence on metal type and annealing temperature

AU - Wang, Y. Z.

AU - Awadelkarim, Osama O.

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Y1 - 2000/5/1

N2 - We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.

AB - We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.

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UR - https://www.scopus.com/pages/publications/0034187560#tab=citedBy

U2 - 10.1007/s003390051084

DO - 10.1007/s003390051084

M3 - Article

AN - SCOPUS:0034187560

SN - 0947-8396

VL - 70

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EP - 590

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 5

ER -

Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature

Abstract

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