Metal-insulator-semiconductor and metal-insulator-metal devices derived from zirconium phosphonate thin films

Larry J. Kepley; Debra D. Sackett; Christine M. Bell; Thomas E. Mallouk

doi:10.1016/0040-6090(92)90958-E

Metal-insulator-semiconductor and metal-insulator-metal devices derived from zirconium phosphonate thin films

Larry J. Kepley
, Debra D. Sackett
, Christine M. Bell
, Thomas E. Mallouk

Chemistry

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Metal-insulator-semiconductor and metal-insulator-metal (MIM) structures were fabricated by layer-by-layer adsorption of zirconium alkanediylbiphosphonates, Zr(O₃PC_nH_2nPO₃), n = 2, 4, 6, 8, 10, on silicon and gold surfaces. High frequency capacitance-voltage (C-V) measurements showed accumulation and depletion regions for 5-20 layer films grown on p-type silicon. Plots of layer capacitance vs. inverse thickness were linear and gave film dielectric constants of approximately 4.0. Films of thickness 25-30 nm grown on gold surfaces were also pinhole free, as evidenced by C-V and current-voltage measurements. Anomalously high values of ε/ε₀ for gold-metal phosphonate-gold MIM structures indicated that the evaporated gold top contact penetrated the insulating thin film to some extent.

Original language	English (US)
Pages (from-to)	132-136
Number of pages	5
Journal	Thin Solid Films
Volume	208
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(92)90958-E
State	Published - Feb 10 1992

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(92)90958-E

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@article{52be168356da4cd1b6db99a2621df586,

title = "Metal-insulator-semiconductor and metal-insulator-metal devices derived from zirconium phosphonate thin films",

abstract = "Metal-insulator-semiconductor and metal-insulator-metal (MIM) structures were fabricated by layer-by-layer adsorption of zirconium alkanediylbiphosphonates, Zr(O3PCnH2nPO3), n = 2, 4, 6, 8, 10, on silicon and gold surfaces. High frequency capacitance-voltage (C-V) measurements showed accumulation and depletion regions for 5-20 layer films grown on p-type silicon. Plots of layer capacitance vs. inverse thickness were linear and gave film dielectric constants of approximately 4.0. Films of thickness 25-30 nm grown on gold surfaces were also pinhole free, as evidenced by C-V and current-voltage measurements. Anomalously high values of ε/ε0 for gold-metal phosphonate-gold MIM structures indicated that the evaporated gold top contact penetrated the insulating thin film to some extent.",

author = "Kepley, \{Larry J.\} and Sackett, \{Debra D.\} and Bell, \{Christine M.\} and Mallouk, \{Thomas E.\}",

note = "Funding Information: This work was supported by grants from the State of Texas through Advanced Technology Program 003658-394, the National Science Foundation (PYI Award CHE-8657729) and the Robert A. Welch Foundation. T.E.M. also thanks the Camille and Henry Dreyfus Foundation for support in the fi\textasciitilde{}rm of a Teacher Scholar Award.",

year = "1992",

month = feb,

day = "10",

doi = "10.1016/0040-6090(92)90958-E",

language = "English (US)",

volume = "208",

pages = "132--136",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

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TY - JOUR

T1 - Metal-insulator-semiconductor and metal-insulator-metal devices derived from zirconium phosphonate thin films

AU - Kepley, Larry J.

AU - Sackett, Debra D.

AU - Bell, Christine M.

AU - Mallouk, Thomas E.

N1 - Funding Information: This work was supported by grants from the State of Texas through Advanced Technology Program 003658-394, the National Science Foundation (PYI Award CHE-8657729) and the Robert A. Welch Foundation. T.E.M. also thanks the Camille and Henry Dreyfus Foundation for support in the fi~rm of a Teacher Scholar Award.

PY - 1992/2/10

Y1 - 1992/2/10

N2 - Metal-insulator-semiconductor and metal-insulator-metal (MIM) structures were fabricated by layer-by-layer adsorption of zirconium alkanediylbiphosphonates, Zr(O3PCnH2nPO3), n = 2, 4, 6, 8, 10, on silicon and gold surfaces. High frequency capacitance-voltage (C-V) measurements showed accumulation and depletion regions for 5-20 layer films grown on p-type silicon. Plots of layer capacitance vs. inverse thickness were linear and gave film dielectric constants of approximately 4.0. Films of thickness 25-30 nm grown on gold surfaces were also pinhole free, as evidenced by C-V and current-voltage measurements. Anomalously high values of ε/ε0 for gold-metal phosphonate-gold MIM structures indicated that the evaporated gold top contact penetrated the insulating thin film to some extent.

AB - Metal-insulator-semiconductor and metal-insulator-metal (MIM) structures were fabricated by layer-by-layer adsorption of zirconium alkanediylbiphosphonates, Zr(O3PCnH2nPO3), n = 2, 4, 6, 8, 10, on silicon and gold surfaces. High frequency capacitance-voltage (C-V) measurements showed accumulation and depletion regions for 5-20 layer films grown on p-type silicon. Plots of layer capacitance vs. inverse thickness were linear and gave film dielectric constants of approximately 4.0. Films of thickness 25-30 nm grown on gold surfaces were also pinhole free, as evidenced by C-V and current-voltage measurements. Anomalously high values of ε/ε0 for gold-metal phosphonate-gold MIM structures indicated that the evaporated gold top contact penetrated the insulating thin film to some extent.

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DO - 10.1016/0040-6090(92)90958-E

M3 - Article

AN - SCOPUS:0026817694

SN - 0040-6090

VL - 208

SP - 132

EP - 136

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Metal-insulator-semiconductor and metal-insulator-metal devices derived from zirconium phosphonate thin films

Abstract

All Science Journal Classification (ASJC) codes

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