Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53 Ga0.47 As by chemical beam deposition

Roman Engel-Herbert; Yoontae Hwang; Jol Cagnon; Susanne Stemmer

doi:10.1063/1.3204465

Metal-oxide-semiconductor capacitors with ZrO₂ dielectrics grown on In_0.53 Ga_0.47 As by chemical beam deposition

Roman Engel-Herbert, Yoontae Hwang, Jol Cagnon, Susanne Stemmer

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Zirconium oxide films were grown by chemical beam deposition with zirconium tert-butoxide as the source on (2×4) reconstructed, n -type In _0.53 Ga_0.47 As surfaces obtained after As decapping. Optimized growth conditions yielded ZrO₂ / In_0.53 Ga _0.47 As interfaces that were free of second phases. Capacitance-voltage (CV) measurements with different top electrodes showed a frequency dispersion of less than 2% per decade in accumulation. The accumulation capacitance and horizontal position of the CV curve were independent of temperature, while the inversion capacitance was strongly temperature dependent. Flat band voltages correlated with the work function of the metal electrode.

Original language	English (US)
Article number	062908
Journal	Applied Physics Letters
Volume	95
Issue number	6
DOIs	https://doi.org/10.1063/1.3204465
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3204465

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@article{57c66963efa640489a04478452dc5584,

title = "Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53 Ga0.47 As by chemical beam deposition",

abstract = "Zirconium oxide films were grown by chemical beam deposition with zirconium tert-butoxide as the source on (2×4) reconstructed, n -type In 0.53 Ga0.47 As surfaces obtained after As decapping. Optimized growth conditions yielded ZrO2 / In0.53 Ga 0.47 As interfaces that were free of second phases. Capacitance-voltage (CV) measurements with different top electrodes showed a frequency dispersion of less than 2% per decade in accumulation. The accumulation capacitance and horizontal position of the CV curve were independent of temperature, while the inversion capacitance was strongly temperature dependent. Flat band voltages correlated with the work function of the metal electrode.",

author = "Roman Engel-Herbert and Yoontae Hwang and Jol Cagnon and Susanne Stemmer",

note = "Funding Information: The authors thank Yan Zheng and John English for help with the experimental setup and acknowledge funding from the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.003) and Intel Custom Funding (Task ID 1635.002). R.E.-H. acknowledges support from the Alexander-von-Humboldt Foundation through a Feodor-Lynen fellowship. This work made use of the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network. ",

year = "2009",

doi = "10.1063/1.3204465",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53 Ga0.47 As by chemical beam deposition

AU - Engel-Herbert, Roman

AU - Hwang, Yoontae

AU - Cagnon, Jol

AU - Stemmer, Susanne

N1 - Funding Information: The authors thank Yan Zheng and John English for help with the experimental setup and acknowledge funding from the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.003) and Intel Custom Funding (Task ID 1635.002). R.E.-H. acknowledges support from the Alexander-von-Humboldt Foundation through a Feodor-Lynen fellowship. This work made use of the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network.

PY - 2009

Y1 - 2009

N2 - Zirconium oxide films were grown by chemical beam deposition with zirconium tert-butoxide as the source on (2×4) reconstructed, n -type In 0.53 Ga0.47 As surfaces obtained after As decapping. Optimized growth conditions yielded ZrO2 / In0.53 Ga 0.47 As interfaces that were free of second phases. Capacitance-voltage (CV) measurements with different top electrodes showed a frequency dispersion of less than 2% per decade in accumulation. The accumulation capacitance and horizontal position of the CV curve were independent of temperature, while the inversion capacitance was strongly temperature dependent. Flat band voltages correlated with the work function of the metal electrode.

AB - Zirconium oxide films were grown by chemical beam deposition with zirconium tert-butoxide as the source on (2×4) reconstructed, n -type In 0.53 Ga0.47 As surfaces obtained after As decapping. Optimized growth conditions yielded ZrO2 / In0.53 Ga 0.47 As interfaces that were free of second phases. Capacitance-voltage (CV) measurements with different top electrodes showed a frequency dispersion of less than 2% per decade in accumulation. The accumulation capacitance and horizontal position of the CV curve were independent of temperature, while the inversion capacitance was strongly temperature dependent. Flat band voltages correlated with the work function of the metal electrode.

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Metal-oxide-semiconductor capacitors with ZrO₂ dielectrics grown on In_0.53 Ga_0.47 As by chemical beam deposition

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