Metalorganic chemical vapor deposition of Bi2Se3 thin films for topological insulator applications

Joseph E. Brom, Joan Marie Redwing

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The growth of thin Bi2Se3 films on (0001) sapphire substrates by metalorganic chemical vapor deposition (MOCVD) was investigated. A two-heater configuration was employed to pre-crack the metalorganic sources upstream of the substrate while maintaining a low substrate temperature (< 250°C). Epitaxial Bi2Se3 films with (006) X-ray rocking curve full-width-at-half-maximum values on the order of 160 arcsecs were obtained at growth rates of 6 nm/min or lower while higher growth rates resulted in polycrystalline films. The background electron concentration of the films was found to depend strongly on the substrate temperature and Se/Bi inlet ratio. Bi2Se3 films with a room temperature electron concentration of 6.7x1019 cm-3 and mobility of 155 cm2/Vs were obtained at 200°C with a Se/Bi ratio of 80. Higher substrate temperature and lower Se/Bi ratios resulted in an increase in electron concentration and corresponding reduction in mobility. The results demonstrate the potential of MOCVD for the growth of Bi2Se3 and related materials for topological insulator studies.

Original languageEnglish (US)
Title of host publicationNanoepitaxy
Subtitle of host publicationMaterials and Devices VI
EditorsNobuhiko P. Kobayashi, A. Alec Talin, Albert V. Davydov, M. Saif Islam
ISBN (Electronic)9781628412017
StatePublished - Jan 1 2014
EventNanoepitaxy: Materials and Devices VI - San Diego, United States
Duration: Aug 19 2014Aug 21 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherNanoepitaxy: Materials and Devices VI
Country/TerritoryUnited States
CitySan Diego

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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