Abstract
A method is presented which allows the determination of density of charge induced by the potential of a metal electrode on the surface of an ultra-thin dielectric layer on a semiconductor substrate. The value of the determined charge density is a measure of ultra-thin dielectric layer surface conductivity. The proposed method can be used in conjunction with the fabrication of ultra-thin SiO//2 layers on a silicon substrate.
Translated title of the contribution | Method for Determining the Surface Charge Density of Ultra-Thin Dielectric Layers on a Semiconductor Substrate. |
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Original language | Polish |
Pages (from-to) | 725-727 |
Number of pages | 3 |
Journal | Arch Elektrotech (Warsaw) |
Volume | 27 |
Issue number | 3 |
State | Published - 1978 |
All Science Journal Classification (ASJC) codes
- General Engineering