TY - JOUR
T1 - MgB2/insulator/Pb josephson junctions with different tunnel barriers
AU - Cui, Y.
AU - Chen, Ke
AU - Li, Qi
AU - Xi, X. X.
AU - Rowell, J. M.
N1 - Funding Information:
Manuscript received August 29, 2006. This work was supported in part by ONR under Grant N00014-00-1-0294 (for X. X. Xi) and in part by NSF under Grant DMR-0405502 (for Q. Li) and DMR-0306746 (for X. X. Xi). Y. Cui, K. Chen, and Q. Li are with the Department of Physics, Pennsylvania State University, University Park, PA 16802 USA (e-mail: yicui@psu.edu). X. X. Xi is with the Department of Physics and Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA. J. M. Rowell is with the Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006 USA. Digital Object Identifier 10.1109/TASC.2007.898597
PY - 2007/6
Y1 - 2007/6
N2 - High quality MgB2/insulator/Pb Josephson tunnel junctions with two different barriers were studied. The junctions were fabricated using MgB3 films grown by hybrid physical-chemical vapor deposition and the barriers were formed at different temperature regions. Both kinds of junctions show clear tunneling characteristics with clear Josephson supercurrent, high IcRN products, and the expected Ic(B) pattern. The junctions with barriers formed at 200 to 450°C have higher I cRN, larger MgB2 π gap values, thinner barriers and higher barrier heights than the junctions with barriers formed over 700°C. In addition, some intermediate temperature barrier junctions show features due to the ógap of MgB2, which were not observed in the high temperature barrier junctions. High device yield Indicates that the approaches to form tunnel barriers are promising for device fabrications.
AB - High quality MgB2/insulator/Pb Josephson tunnel junctions with two different barriers were studied. The junctions were fabricated using MgB3 films grown by hybrid physical-chemical vapor deposition and the barriers were formed at different temperature regions. Both kinds of junctions show clear tunneling characteristics with clear Josephson supercurrent, high IcRN products, and the expected Ic(B) pattern. The junctions with barriers formed at 200 to 450°C have higher I cRN, larger MgB2 π gap values, thinner barriers and higher barrier heights than the junctions with barriers formed over 700°C. In addition, some intermediate temperature barrier junctions show features due to the ógap of MgB2, which were not observed in the high temperature barrier junctions. High device yield Indicates that the approaches to form tunnel barriers are promising for device fabrications.
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U2 - 10.1109/TASC.2007.898597
DO - 10.1109/TASC.2007.898597
M3 - Article
AN - SCOPUS:34547403763
SN - 1051-8223
VL - 17
SP - 218
EP - 221
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
IS - 2
ER -