MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy

O. Maksimov; P. Fisher; M. Skowronski; P. A. Salvador; M. Snyder; J. Xu; X. Weng

doi:10.1016/j.jcrysgro.2008.02.013

MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy

O. Maksimov
, P. Fisher
, M. Skowronski
, P. A. Salvador
, M. Snyder
, J. Xu
, X. Weng

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 °C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 2̄]_MgO∥(0 0 1)[1 0 0]_YSZ with four twin variants related by a 90° in-plane rotation about the [1 1 1]_MgO axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy.

Original language	English (US)
Pages (from-to)	2760-2766
Number of pages	7
Journal	Journal of Crystal Growth
Volume	310
Issue number	11
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.02.013
State	Published - May 15 2008

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2008.02.013

Cite this

@article{0b67c815f433416e8ef0d50e6fc80116,

title = "MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy",

abstract = "MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 °C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 {\=2}]MgO∥(0 0 1)[1 0 0]YSZ with four twin variants related by a 90° in-plane rotation about the [1 1 1]MgO axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy.",

author = "O. Maksimov and P. Fisher and M. Skowronski and Salvador, \{P. A.\} and M. Snyder and J. Xu and X. Weng",

note = "Funding Information: This work was supported by the Office of Naval Research under Grants N00014-05-1-0238 and N00014-06-1-1018.",

year = "2008",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2008.02.013",

language = "English (US)",

volume = "310",

pages = "2760--2766",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "11",

}

TY - JOUR

T1 - MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy

AU - Maksimov, O.

AU - Fisher, P.

AU - Skowronski, M.

AU - Salvador, P. A.

AU - Snyder, M.

AU - Xu, J.

AU - Weng, X.

N1 - Funding Information: This work was supported by the Office of Naval Research under Grants N00014-05-1-0238 and N00014-06-1-1018.

PY - 2008/5/15

Y1 - 2008/5/15

N2 - MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 °C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 2̄]MgO∥(0 0 1)[1 0 0]YSZ with four twin variants related by a 90° in-plane rotation about the [1 1 1]MgO axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy.

AB - MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 °C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 2̄]MgO∥(0 0 1)[1 0 0]YSZ with four twin variants related by a 90° in-plane rotation about the [1 1 1]MgO axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy.

UR - https://www.scopus.com/pages/publications/42749083557

UR - https://www.scopus.com/pages/publications/42749083557#tab=citedBy

U2 - 10.1016/j.jcrysgro.2008.02.013

DO - 10.1016/j.jcrysgro.2008.02.013

M3 - Article

AN - SCOPUS:42749083557

SN - 0022-0248

VL - 310

SP - 2760

EP - 2766

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 11

ER -

MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this