Micron thick Gd₂O₃ films for GaN/AlGaN metal-oxide-semiconductor heterostructures

Keyphrases

• Metal Oxide Semiconductor 100%
• Aluminum Gallium Nitride (AlGaN) 100%
• Gd2O3 100%
• Semiconductor Heterostructures 100%
• Capacitance-voltage 66%
• Poole-Frenkel Conduction 66%
• Conduction Mechanism 33%
• Transmission Electron Microscopy Analysis 33%
• Highly Oriented 33%
• Electron Beam Physical Vapor Deposition (EB-PVD) 33%
• Columnar Microstructure 33%
• Film Thickness 33%
• Hysteresis 33%
• Bixbyite 33%
• Threshold Shift 33%
• Schottky Barrier Height 33%
• C Emissions 33%
• Trapped Charge Density 33%
• Schottky Emission 33%
• Trap Height 33%
• Feather-like 33%
• AlGaN/GaN Heterostructure 33%
• Selective Area Electron Diffraction 33%

Material Science

• Film 100%
• Heterojunction 100%
• Oxide Semiconductor 100%
• Metal Oxide 100%
• Capacitance 40%
• Density 20%
• Electron Microscopy 20%
• Transmission Electron Microscopy 20%
• Schottky Barrier 20%
• Electron Beam Physical Vapor Deposition 20%
• Film Thickness 20%
• Selected Area Diffraction 20%
• Single Crystal 20%