@inproceedings{71a8cb861826440aa73885e572d9f12f,
title = "Microscopic Crystal Phase Inspired Modeling of Zr Concentration Effects in Hf1-xZrxO2Thin Films",
abstract = "In this paper, we theoretically and experimentally investigate the Zr concentration dependent crystal phase transition of Hf1-xZxO2 (HZO) and the corresponding evolution of dielectric (DE), ferroelectric (FE) and anti-ferroelectric (AFE) characteristics. Providing the microscopic insights of strain induced crystal phase transformations, we propose a physics based model that shows good agreement with our experimental results for 10nm Hf1-xZxO2 (with x=0 through 1). Utilizing our model, we analyze HZO-FET operation as a non-volatile memory device for different x.",
author = "Saha, {A. K.} and B. Grisafe and S. Datta and Gupta, {S. K.}",
note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.; 39th Symposium on VLSI Technology, VLSI Technology 2019 ; Conference date: 09-06-2019 Through 14-06-2019",
year = "2019",
month = jun,
doi = "10.23919/VLSIT.2019.8776533",
language = "English (US)",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "T226--T227",
booktitle = "2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers",
address = "United States",
}