Abstract
We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine interactions the defect is identified as a di-hydrogen vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers.
Original language | English (US) |
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Pages (from-to) | 3042-3045 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 64 |
Issue number | 25 |
DOIs | |
State | Published - 1990 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)