Microscopic identification and electronic structure of a di-hydrogen vacancy complex in silicon by optical detection of magnetic resonance

W. M. Chen, O. O. Awadelkarim, B. Monemar, J. L. Lindström, G. S. Oehrlein

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine interactions the defect is identified as a di-hydrogen vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers.

Original languageEnglish (US)
Pages (from-to)3042-3045
Number of pages4
JournalPhysical review letters
Volume64
Issue number25
DOIs
StatePublished - 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Microscopic identification and electronic structure of a di-hydrogen vacancy complex in silicon by optical detection of magnetic resonance'. Together they form a unique fingerprint.

Cite this